auf Bestellung 21581 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 0.95 EUR |
| 10+ | 0.61 EUR |
| 100+ | 0.39 EUR |
| 500+ | 0.29 EUR |
| 1000+ | 0.26 EUR |
| 3000+ | 0.23 EUR |
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Technische Details SI2301BDS-T1-BE3 Vishay / Siliconix
Description: P-CHANNEL 2.5-V (G-S) MOSFET, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta), Rds On (Max) @ Id, Vgs: 100mOhm @ 2.8A, 4.5V, Power Dissipation (Max): 700mW (Ta), Vgs(th) (Max) @ Id: 950mV @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 6 V.
Weitere Produktangebote SI2301BDS-T1-BE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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| SI2301BDS-T1-BE3 | Hersteller : Vishay |
 Trans MOSFET P-CH Si 20V 2.2A 3-Pin SOT-23 |
Produkt ist nicht verfügbar |
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| SI2301BDS-T1-BE3 | Hersteller : Vishay |
Trans MOSFET P-CH Si 20V 2.2A |
Produkt ist nicht verfügbar |
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SI2301BDS-T1-BE3 | Hersteller : Vishay Siliconix |
Description: P-CHANNEL 2.5-V (G-S) MOSFET Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) Rds On (Max) @ Id, Vgs: 100mOhm @ 2.8A, 4.5V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 6 V |
Produkt ist nicht verfügbar |
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SI2301BDS-T1-BE3 | Hersteller : Vishay Siliconix |
Description: P-CHANNEL 2.5-V (G-S) MOSFET Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) Rds On (Max) @ Id, Vgs: 100mOhm @ 2.8A, 4.5V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 375 pF @ 6 V |
Produkt ist nicht verfügbar |