Technische Details SI2301HE3-TP Micro Commercial Components
Description: P-CHANNEL MOSFET,SOT-23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta), Rds On (Max) @ Id, Vgs: 100mOhm @ 2.4A, 4.5V, Power Dissipation (Max): 1.1W (Tj), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: SOT-23, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 418 pF @ 10 V, Qualification: AEC-Q101.
Weitere Produktangebote SI2301HE3-TP
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
---|---|---|---|---|---|
SI2301HE3-TP | Hersteller : Micro Commercial Components | SI2301HE3-TP |
Produkt ist nicht verfügbar |
||
SI2301HE3-TP | Hersteller : Micro Commercial Co |
Description: P-CHANNEL MOSFET,SOT-23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) Rds On (Max) @ Id, Vgs: 100mOhm @ 2.4A, 4.5V Power Dissipation (Max): 1.1W (Tj) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 418 pF @ 10 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
||
SI2301HE3-TP | Hersteller : Micro Commercial Co |
Description: P-CHANNEL MOSFET,SOT-23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.4A (Ta) Rds On (Max) @ Id, Vgs: 100mOhm @ 2.4A, 4.5V Power Dissipation (Max): 1.1W (Tj) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 5.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 418 pF @ 10 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
||
SI2301HE3-TP | Hersteller : Micro Commercial Components (MCC) | MOSFET P-CHANNEL MOSFET,SOT-23 |
Produkt ist nicht verfügbar |