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SI2301Q-TPAU

SI2301Q-TPAU Micro Commercial Co


Hersteller: Micro Commercial Co
Description: MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Supplier Device Package: SOT-23
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A
Rds On (Max) @ Id, Vgs: 120mOhm @ 2.8A, 4.5V
Power Dissipation (Max): 1.25W
Vgs(th) (Max) @ Id: 1V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 6 V
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Technische Details SI2301Q-TPAU Micro Commercial Co

Description: MOSFET, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Supplier Device Package: SOT-23, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.8A, Rds On (Max) @ Id, Vgs: 120mOhm @ 2.8A, 4.5V, Power Dissipation (Max): 1.25W, Vgs(th) (Max) @ Id: 1V @ 250µA, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 6 V.

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SI2301Q-TPAU SI2301Q-TPAU Hersteller : Micro Commercial Components (MCC) SI2301_SOT_23_-2510054.pdf MOSFET
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