SI2302CDS-T1-E3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 20V 2.6A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 57mOhm @ 3.6A, 4.5V
Power Dissipation (Max): 710mW (Ta)
Vgs(th) (Max) @ Id: 850mV @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V
auf Bestellung 75000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.22 EUR |
| 6000+ | 0.21 EUR |
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Technische Details SI2302CDS-T1-E3 Vishay Siliconix
Description: MOSFET N-CH 20V 2.6A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta), Rds On (Max) @ Id, Vgs: 57mOhm @ 3.6A, 4.5V, Power Dissipation (Max): 710mW (Ta), Vgs(th) (Max) @ Id: 850mV @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V.
Weitere Produktangebote SI2302CDS-T1-E3 nach Preis ab 0.21 EUR bis 0.65 EUR
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SI2302CDS-T1-E3 | Hersteller : Vishay Semiconductors |
MOSFETs 20V Vds 8V Vgs SOT-23 |
auf Bestellung 360995 Stücke: Lieferzeit 10-14 Tag (e) |
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SI2302CDS-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 20V 2.6A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Rds On (Max) @ Id, Vgs: 57mOhm @ 3.6A, 4.5V Power Dissipation (Max): 710mW (Ta) Vgs(th) (Max) @ Id: 850mV @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V |
auf Bestellung 76813 Stücke: Lieferzeit 10-14 Tag (e) |
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SI2302CDS-T1-E3 Produktcode: 181529
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Transistoren > MOSFET N-CH |
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| SI2302CDS-T1-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 20V 2.6A 3-Pin SOT-23 T/R |
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SI2302CDS-T1-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 20V 2.6A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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SI2302CDS-T1-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 20V 2.6A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |