SI2302DS-EV EVVO
Hersteller: EVVO
Description: N-CHANNEL 20 V (D-S) MOSFET SOT-
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Supplier Device Package: SOT-23
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 10 V
Rds On (Max) @ Id, Vgs: 27mOhm @ 2.5A, 4.5V
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Technische Details SI2302DS-EV EVVO
Description: N-CHANNEL 20 V (D-S) MOSFET SOT-, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Supplier Device Package: SOT-23, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Tc), Power Dissipation (Max): 700mW (Ta), Vgs(th) (Max) @ Id: 900mV @ 250µA, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 10 V, Rds On (Max) @ Id, Vgs: 27mOhm @ 2.5A, 4.5V.
Weitere Produktangebote SI2302DS-EV nach Preis ab 0.095 EUR bis 0.39 EUR
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SI2302DS-EV | EVVO |
Description: N-CHANNEL 20 V (D-S) MOSFET SOT- Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Supplier Device Package: SOT-23 Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Tc) Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 10 V Rds On (Max) @ Id, Vgs: 27mOhm @ 2.5A, 4.5V |
auf Bestellung 1811 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SI2302DS-EV |
|
Hersteller: EVVO
Description: N-CHANNEL 20 V (D-S) MOSFET SOT-
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Supplier Device Package: SOT-23
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 10 V
Rds On (Max) @ Id, Vgs: 27mOhm @ 2.5A, 4.5V
Description: N-CHANNEL 20 V (D-S) MOSFET SOT-
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Supplier Device Package: SOT-23
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 10 V
Rds On (Max) @ Id, Vgs: 27mOhm @ 2.5A, 4.5V
auf Bestellung 1811 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 53+ | 0.39 EUR |
| 87+ | 0.24 EUR |
| 141+ | 0.15 EUR |
| 500+ | 0.11 EUR |
| 1000+ | 0.095 EUR |