auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.18 EUR |
| 6000+ | 0.17 EUR |
| 9000+ | 0.16 EUR |
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Technische Details SI2303CDS-T1-BE3 Vishay
Description: MOSFET P-CH 30V 1.9A/2.7A SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta), 2.7A (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 1.9A, 10V, Power Dissipation (Max): 1W (Ta), 2.3W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 15 V.
Weitere Produktangebote SI2303CDS-T1-BE3 nach Preis ab 0.16 EUR bis 0.94 EUR
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SI2303CDS-T1-BE3 | Hersteller : Vishay |
 Trans MOSFET P-CH 30V 2.7A 3-Pin SOT-23 T/R |
auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2303CDS-T1-BE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 30V 1.9A/2.7A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta), 2.7A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 1.9A, 10V Power Dissipation (Max): 1W (Ta), 2.3W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 15 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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SI2303CDS-T1-BE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 30V 1.9A/2.7A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta), 2.7A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 1.9A, 10V Power Dissipation (Max): 1W (Ta), 2.3W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 15 V |
auf Bestellung 5436 Stücke: Lieferzeit 10-14 Tag (e) |
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SI2303CDS-T1-BE3 | Hersteller : Vishay / Siliconix |
MOSFETs SOT23 P CHAN 30V |
auf Bestellung 72389 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI2303CDS-T1-BE3 | Hersteller : Vishay |
P-Channel MOSFET |
Produkt ist nicht verfügbar |
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| SI2303CDS-T1-BE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -2.7A; Idm: -10A Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -2.7A Power dissipation: 2.3W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.33Ω Mounting: SMD Gate charge: 8nC Kind of package: reel; tape Kind of channel: enhancement Technology: TrenchFET® Pulsed drain current: -10A Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI2303CDS-T1-BE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -2.7A; Idm: -10A Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -2.7A Power dissipation: 2.3W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.33Ω Mounting: SMD Gate charge: 8nC Kind of package: reel; tape Kind of channel: enhancement Technology: TrenchFET® Pulsed drain current: -10A |
Produkt ist nicht verfügbar |