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Technische Details SI2303CDS-T1-BE3 Vishay
Description: VISHAY - SI2303CDS-T1-BE3 - Leistungs-MOSFET, p-Kanal, 30 V, 2.7 A, 0.19 ohm, SOT-23, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, euEccn: NLR, Drain-Source-Spannung Vds: 30V, rohsCompliant: YES, Dauer-Drainstrom Id: 2.7A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, Gate-Source-Schwellenspannung, max.: 3V, Verlustleistung: 2.3W, SVHC: No SVHC (04-Feb-2026), Bauform - Transistor: SOT-23, Anzahl der Pins: 3Pin(s), Produktpalette: TrenchFET Series, productTraceability: Yes-Date/Lot Code, usEccn: EAR99, Kanaltyp: p-Kanal, Betriebstemperatur, max.: 150°C, Rds(on)-Prüfspannung: 10V, Drain-Source-Durchgangswiderstand: 0.19ohm.
Weitere Produktangebote SI2303CDS-T1-BE3 nach Preis ab 0.25 EUR bis 1.51 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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SI2303CDS-T1-BE3 | Vishay |
 Trans MOSFET P-CH 30V 2.7A 3-Pin SOT-23 T/R |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2303CDS-T1-BE3 | Vishay Siliconix |
Description: MOSFET P-CH 30V 1.9A/2.7A SOT23 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta), 2.7A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 1.9A, 10V Power Dissipation (Max): 1W (Ta), 2.3W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 15 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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SI2303CDS-T1-BE3 | Vishay / Siliconix |
MOSFETs SOT23 P-CH 30V 1.9A |
auf Bestellung 67602 Stücke: Lieferzeit 10-14 Tag (e) |
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SI2303CDS-T1-BE3 | VISHAY |
Description: VISHAY - SI2303CDS-T1-BE3 - Leistungs-MOSFET, p-Kanal, 30 V, 2.7 A, 0.19 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 2.7A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Gate-Source-Schwellenspannung, max.: 3V Verlustleistung: 2.3W SVHC: No SVHC (04-Feb-2026) Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: TrenchFET Series productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: p-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 0.19ohm |
auf Bestellung 2900 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2303CDS-T1-BE3 | VISHAY |
Description: VISHAY - SI2303CDS-T1-BE3 - Leistungs-MOSFET, p-Kanal, 30 V, 2.7 A, 0.19 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES euEccn: NLR isCanonical: N hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 |
auf Bestellung 2900 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2303CDS-T1-BE3 | Vishay Siliconix |
Description: MOSFET P-CH 30V 1.9A/2.7A SOT23 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta), 2.7A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 1.9A, 10V Power Dissipation (Max): 1W (Ta), 2.3W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 15 V |
auf Bestellung 5266 Stücke: Lieferzeit 10-14 Tag (e) |
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Hersteller: Vishay
Trans MOSFET P-CH 30V 2.7A 3-Pin SOT-23 T/R
Trans MOSFET P-CH 30V 2.7A 3-Pin SOT-23 T/R
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.25 EUR |
| SI2303CDS-T1-BE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 1.9A/2.7A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta), 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 1.9A, 10V
Power Dissipation (Max): 1W (Ta), 2.3W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 15 V
Description: MOSFET P-CH 30V 1.9A/2.7A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta), 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 1.9A, 10V
Power Dissipation (Max): 1W (Ta), 2.3W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.36 EUR |
| SI2303CDS-T1-BE3 |
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Hersteller: Vishay / Siliconix
MOSFETs SOT23 P-CH 30V 1.9A
MOSFETs SOT23 P-CH 30V 1.9A
auf Bestellung 67602 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.17 EUR |
| 10+ | 0.82 EUR |
| 100+ | 0.57 EUR |
| 500+ | 0.44 EUR |
| 1000+ | 0.39 EUR |
| 3000+ | 0.3 EUR |
| 6000+ | 0.29 EUR |
| SI2303CDS-T1-BE3 |
|
Hersteller: VISHAY
Description: VISHAY - SI2303CDS-T1-BE3 - Leistungs-MOSFET, p-Kanal, 30 V, 2.7 A, 0.19 ohm, SOT-23, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 2.7A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 3V
Verlustleistung: 2.3W
SVHC: No SVHC (04-Feb-2026)
Bauform - Transistor: SOT-23
Anzahl der Pins: 3Pin(s)
Produktpalette: TrenchFET Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: p-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.19ohm
Description: VISHAY - SI2303CDS-T1-BE3 - Leistungs-MOSFET, p-Kanal, 30 V, 2.7 A, 0.19 ohm, SOT-23, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 2.7A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 3V
Verlustleistung: 2.3W
SVHC: No SVHC (04-Feb-2026)
Bauform - Transistor: SOT-23
Anzahl der Pins: 3Pin(s)
Produktpalette: TrenchFET Series
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: p-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.19ohm
auf Bestellung 2900 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 179+ | 1.39 EUR |
| 255+ | 0.92 EUR |
| 368+ | 0.58 EUR |
| 500+ | 0.55 EUR |
| 1000+ | 0.5 EUR |
| SI2303CDS-T1-BE3 |
|
Hersteller: VISHAY
Description: VISHAY - SI2303CDS-T1-BE3 - Leistungs-MOSFET, p-Kanal, 30 V, 2.7 A, 0.19 ohm, SOT-23, Oberflächenmontage
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
euEccn: NLR
isCanonical: N
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
Description: VISHAY - SI2303CDS-T1-BE3 - Leistungs-MOSFET, p-Kanal, 30 V, 2.7 A, 0.19 ohm, SOT-23, Oberflächenmontage
tariffCode: 85412900
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
euEccn: NLR
isCanonical: N
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
auf Bestellung 2900 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 179+ | 1.39 EUR |
| 255+ | 0.92 EUR |
| 368+ | 0.58 EUR |
| 500+ | 0.55 EUR |
| 1000+ | 0.5 EUR |
| SI2303CDS-T1-BE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 1.9A/2.7A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta), 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 1.9A, 10V
Power Dissipation (Max): 1W (Ta), 2.3W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 15 V
Description: MOSFET P-CH 30V 1.9A/2.7A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta), 2.7A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 1.9A, 10V
Power Dissipation (Max): 1W (Ta), 2.3W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 15 V
auf Bestellung 5266 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 14+ | 1.51 EUR |
| 23+ | 0.93 EUR |
| 100+ | 0.6 EUR |
| 500+ | 0.45 EUR |
| 1000+ | 0.42 EUR |