SI2304BDS-T1-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 30V 2.6A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 2.5A, 10V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 15 V
auf Bestellung 87000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.2 EUR |
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Technische Details SI2304BDS-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 30V 2.6A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta), Rds On (Max) @ Id, Vgs: 70mOhm @ 2.5A, 10V, Power Dissipation (Max): 750mW (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 15 V.
Weitere Produktangebote SI2304BDS-T1-GE3 nach Preis ab 0.22 EUR bis 1.11 EUR
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SI2304BDS-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 2.6A 3-Pin SOT-23 T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2304BDS-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 2.6A 3-Pin SOT-23 T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2304BDS-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 30V 2.6A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) Rds On (Max) @ Id, Vgs: 70mOhm @ 2.5A, 10V Power Dissipation (Max): 750mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 15 V |
auf Bestellung 90897 Stücke: Lieferzeit 10-14 Tag (e) |
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SI2304BDS-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFET 30V 3.2A 1.08W 70mohm @ 10V |
auf Bestellung 427846 Stücke: Lieferzeit 14-28 Tag (e) |
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SI2304BDS-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 2.6A 3-Pin SOT-23 T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| SI2304BDS-T1-GE3 | Hersteller : VBsemi |
Transistor N-MOSFET; 30V; 20V; 105mOhm; 2,6A; 750mW; -55°C~150°C; SI2304-TP; SI2304BDS-T1-BE3; SI2304BDS-T1-GE3; SI2304BDS-T1-E3; Transistors - FETs, MOSFETs - Single; SI2304BDS-T1-GE3-VB; SI2304BDS TSI2304bds VBS Anzahl je Verpackung: 50 Stücke |
auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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| SI2304BDS-T1-GE3 | Hersteller : Vishay |
Transistor N-Channel MOSFET; 30V; 20V; 105mOhm; 2,6A; 750mW; -55°C ~ 150°C; Equivalent: SI2304-TP; SI2304BDS-T1-BE3; SI2304BDS-T1-GE3; SI2304BDS-T1-E3; SI2304BDS TSI2304bds Anzahl je Verpackung: 25 Stücke |
auf Bestellung 150 Stücke: Lieferzeit 7-14 Tag (e) |
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| SI2304BDS-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 2.6A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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SI2304BDS-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 2.6A; Idm: 10A; 0.48W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 2.6A Pulsed drain current: 10A Power dissipation: 0.48W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 70mΩ Mounting: SMD Gate charge: 4nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SI2304BDS-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 2.6A; Idm: 10A; 0.48W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 2.6A Pulsed drain current: 10A Power dissipation: 0.48W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 70mΩ Mounting: SMD Gate charge: 4nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |