
SI2305BHE3-TP Micro Commercial Components
auf Bestellung 663000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis |
---|---|
12000+ | 0.09 EUR |
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Technische Details SI2305BHE3-TP Micro Commercial Components
Description: P-CHANNEL MOSFET,SOT-23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.2A, Rds On (Max) @ Id, Vgs: 60mOhm @ 2.7A, 4.5V, Power Dissipation (Max): 1.4W, Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: SOT-23, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 10.98 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 10 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote SI2305BHE3-TP nach Preis ab 0.19 EUR bis 0.74 EUR
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SI2305BHE3-TP | Hersteller : MCC (Micro Commercial Components) |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A Rds On (Max) @ Id, Vgs: 60mOhm @ 2.7A, 4.5V Power Dissipation (Max): 1.4W Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10.98 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 2665 Stücke: Lieferzeit 10-14 Tag (e) |
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SI2305BHE3-TP | Hersteller : Micro Commercial Components |
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Produkt ist nicht verfügbar |
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SI2305BHE3-TP | Hersteller : MCC (Micro Commercial Components) |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A Rds On (Max) @ Id, Vgs: 60mOhm @ 2.7A, 4.5V Power Dissipation (Max): 1.4W Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10.98 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1010 pF @ 10 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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SI2305BHE3-TP | Hersteller : Micro Commercial Components (MCC) |
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Produkt ist nicht verfügbar |