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SI2306BDS-T1-GE3

SI2306BDS-T1-GE3 Vishay Siliconix

si2306bd.pdf
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 3.16A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.16A (Ta)
Rds On (Max) @ Id, Vgs: 47mOhm @ 3.5A, 10V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 15 V
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.33 EUR
6000+0.31 EUR
9000+0.29 EUR
15000+0.28 EUR
21000+0.27 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details SI2306BDS-T1-GE3 Vishay Siliconix

Description: MOSFET N-CH 30V 3.16A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.16A (Ta), Rds On (Max) @ Id, Vgs: 47mOhm @ 3.5A, 10V, Power Dissipation (Max): 750mW (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 15 V.

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SI2306BDS-T1-GE3 SI2306BDS-T1-GE3 Vishay si2306bds.pdf Trans MOSFET N-CH 30V 3.16A 3-Pin SOT-23 T/R
auf Bestellung 716 Stücke:
Lieferzeit 14-21 Tag (e)
205+0.71 EUR
296+0.48 EUR
500+0.37 EUR
Mindestbestellmenge: 205
Im Einkaufswagen  Stück im Wert von  UAH
SI2306BDS-T1-GE3 SI2306BDS-T1-GE3 Vishay / Siliconix si2306bd.pdf MOSFETs 30V 4.0A 1.25W 47mohm @ 4.5V
auf Bestellung 13811 Stücke:
Lieferzeit 10-14 Tag (e)
3+1.39 EUR
10+0.87 EUR
100+0.56 EUR
500+0.43 EUR
1000+0.39 EUR
3000+0.33 EUR
6000+0.31 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
SI2306BDS-T1-GE3 SI2306BDS-T1-GE3 Vishay Siliconix si2306bd.pdf Description: MOSFET N-CH 30V 3.16A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.16A (Ta)
Rds On (Max) @ Id, Vgs: 47mOhm @ 3.5A, 10V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 15 V
auf Bestellung 23344 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.39 EUR
21+0.86 EUR
100+0.56 EUR
500+0.43 EUR
1000+0.39 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
SI2306BDS-T1-GE3 si2306bds.pdf
SI2306BDS-T1-GE3
Hersteller: Vishay
Trans MOSFET N-CH 30V 3.16A 3-Pin SOT-23 T/R
auf Bestellung 716 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
205+0.71 EUR
296+0.48 EUR
500+0.37 EUR
Mindestbestellmenge: 205
Im Einkaufswagen  Stück im Wert von  UAH
SI2306BDS-T1-GE3 si2306bd.pdf
SI2306BDS-T1-GE3
Hersteller: Vishay / Siliconix
MOSFETs 30V 4.0A 1.25W 47mohm @ 4.5V
auf Bestellung 13811 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.39 EUR
10+0.87 EUR
100+0.56 EUR
500+0.43 EUR
1000+0.39 EUR
3000+0.33 EUR
6000+0.31 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
SI2306BDS-T1-GE3 si2306bd.pdf
SI2306BDS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 3.16A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.16A (Ta)
Rds On (Max) @ Id, Vgs: 47mOhm @ 3.5A, 10V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 15 V
auf Bestellung 23344 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.39 EUR
21+0.86 EUR
100+0.56 EUR
500+0.43 EUR
1000+0.39 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH