SI2306BDS-T1-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 30V 3.16A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.16A (Ta)
Rds On (Max) @ Id, Vgs: 47mOhm @ 3.5A, 10V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 15 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.30 EUR |
| 6000+ | 0.28 EUR |
| 9000+ | 0.27 EUR |
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Technische Details SI2306BDS-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 30V 3.16A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.16A (Ta), Rds On (Max) @ Id, Vgs: 47mOhm @ 3.5A, 10V, Power Dissipation (Max): 750mW (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 15 V.
Weitere Produktangebote SI2306BDS-T1-GE3 nach Preis ab 0.19 EUR bis 1.06 EUR
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SI2306BDS-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 3.16A 3-Pin SOT-23 T/R |
auf Bestellung 2757 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2306BDS-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 3.16A 3-Pin SOT-23 T/R |
auf Bestellung 1645 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2306BDS-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 3.16A 3-Pin SOT-23 T/R |
auf Bestellung 2757 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2306BDS-T1-GE3 | Hersteller : Vishay / Siliconix |
MOSFETs 30V 4.0A 1.25W 47mohm @ 4.5V |
auf Bestellung 3485 Stücke: Lieferzeit 10-14 Tag (e) |
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SI2306BDS-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 30V 3.16A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.16A (Ta) Rds On (Max) @ Id, Vgs: 47mOhm @ 3.5A, 10V Power Dissipation (Max): 750mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 4.5 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 305 pF @ 15 V |
auf Bestellung 9749 Stücke: Lieferzeit 10-14 Tag (e) |
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SI2306BDS-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 3.16A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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SI2306BDS-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 3.16A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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| SI2306BDS-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 4A; Idm: 20A; 1.25W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 4A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 65mΩ Mounting: SMD Gate charge: 4500000000nC Kind of package: reel; tape Kind of channel: enhancement Technology: TrenchFET® Pulsed drain current: 20A Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI2306BDS-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 4A; Idm: 20A; 1.25W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 4A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 65mΩ Mounting: SMD Gate charge: 4500000000nC Kind of package: reel; tape Kind of channel: enhancement Technology: TrenchFET® Pulsed drain current: 20A |
Produkt ist nicht verfügbar |