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Technische Details SI2309CDS-T1-E3 Vishay
Description: MOSFET P-CH 60V 1.6A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc), Rds On (Max) @ Id, Vgs: 345mOhm @ 1.25A, 10V, Power Dissipation (Max): 1W (Ta), 1.7W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 30 V.
Weitere Produktangebote SI2309CDS-T1-E3 nach Preis ab 0.21 EUR bis 1.59 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||
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SI2309CDS-T1-E3 | Vishay |
 Trans MOSFET P-CH 60V 1.6A 3-Pin SOT-23 T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2309CDS-T1-E3 | Vishay |
Trans MOSFET P-CH 60V 1.6A 3-Pin SOT-23 T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2309CDS-T1-E3 | Vishay |
Trans MOSFET P-CH 60V 1.6A 3-Pin SOT-23 T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2309CDS-T1-E3 | Vishay Siliconix |
Description: MOSFET P-CH 60V 1.6A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc) Rds On (Max) @ Id, Vgs: 345mOhm @ 1.25A, 10V Power Dissipation (Max): 1W (Ta), 1.7W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 30 V |
auf Bestellung 17000 Stücke: Lieferzeit 10-14 Tag (e) |
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SI2309CDS-T1-E3 | Vishay |
Trans MOSFET P-CH 60V 1.6A 3-Pin SOT-23 T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2309CDS-T1-E3 | Vishay |
Trans MOSFET P-CH 60V 1.6A 3-Pin SOT-23 T/R |
auf Bestellung 20366 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2309CDS-T1-E3 | Vishay |
Trans MOSFET P-CH 60V 1.6A 3-Pin SOT-23 T/R |
auf Bestellung 20366 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2309CDS-T1-E3 | Vishay Semiconductors |
MOSFETs -60V Vds 20V Vgs SOT-23 |
auf Bestellung 17856 Stücke: Lieferzeit 10-14 Tag (e) |
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SI2309CDS-T1-E3 | Vishay Siliconix |
Description: MOSFET P-CH 60V 1.6A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc) Rds On (Max) @ Id, Vgs: 345mOhm @ 1.25A, 10V Power Dissipation (Max): 1W (Ta), 1.7W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 30 V |
auf Bestellung 17082 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI2309CDS-T1-E3 |
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auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SI2309CDS-T1-E3 |
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Hersteller: Vishay
Trans MOSFET P-CH 60V 1.6A 3-Pin SOT-23 T/R
Trans MOSFET P-CH 60V 1.6A 3-Pin SOT-23 T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.36 EUR |
| SI2309CDS-T1-E3 |
|
Hersteller: Vishay
Trans MOSFET P-CH 60V 1.6A 3-Pin SOT-23 T/R
Trans MOSFET P-CH 60V 1.6A 3-Pin SOT-23 T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.36 EUR |
| SI2309CDS-T1-E3 |
|
Hersteller: Vishay
Trans MOSFET P-CH 60V 1.6A 3-Pin SOT-23 T/R
Trans MOSFET P-CH 60V 1.6A 3-Pin SOT-23 T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.37 EUR |
| SI2309CDS-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 1.6A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 345mOhm @ 1.25A, 10V
Power Dissipation (Max): 1W (Ta), 1.7W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 30 V
Description: MOSFET P-CH 60V 1.6A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 345mOhm @ 1.25A, 10V
Power Dissipation (Max): 1W (Ta), 1.7W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 30 V
auf Bestellung 17000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.38 EUR |
| 6000+ | 0.35 EUR |
| 9000+ | 0.33 EUR |
| 15000+ | 0.31 EUR |
| SI2309CDS-T1-E3 |
|
Hersteller: Vishay
Trans MOSFET P-CH 60V 1.6A 3-Pin SOT-23 T/R
Trans MOSFET P-CH 60V 1.6A 3-Pin SOT-23 T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.43 EUR |
| SI2309CDS-T1-E3 |
|
Hersteller: Vishay
Trans MOSFET P-CH 60V 1.6A 3-Pin SOT-23 T/R
Trans MOSFET P-CH 60V 1.6A 3-Pin SOT-23 T/R
auf Bestellung 20366 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 222+ | 0.79 EUR |
| 320+ | 0.54 EUR |
| 500+ | 0.42 EUR |
| 1000+ | 0.37 EUR |
| 3000+ | 0.31 EUR |
| 6000+ | 0.3 EUR |
| 9000+ | 0.25 EUR |
| SI2309CDS-T1-E3 |
|
Hersteller: Vishay
Trans MOSFET P-CH 60V 1.6A 3-Pin SOT-23 T/R
Trans MOSFET P-CH 60V 1.6A 3-Pin SOT-23 T/R
auf Bestellung 20366 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 166+ | 1.05 EUR |
| 222+ | 0.76 EUR |
| 320+ | 0.5 EUR |
| 500+ | 0.38 EUR |
| 1000+ | 0.33 EUR |
| 3000+ | 0.27 EUR |
| 6000+ | 0.25 EUR |
| 9000+ | 0.21 EUR |
| SI2309CDS-T1-E3 |
|
Hersteller: Vishay Semiconductors
MOSFETs -60V Vds 20V Vgs SOT-23
MOSFETs -60V Vds 20V Vgs SOT-23
auf Bestellung 17856 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.57 EUR |
| 10+ | 0.98 EUR |
| 100+ | 0.63 EUR |
| 500+ | 0.48 EUR |
| 1000+ | 0.43 EUR |
| 3000+ | 0.37 EUR |
| SI2309CDS-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 60V 1.6A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 345mOhm @ 1.25A, 10V
Power Dissipation (Max): 1W (Ta), 1.7W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 30 V
Description: MOSFET P-CH 60V 1.6A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 345mOhm @ 1.25A, 10V
Power Dissipation (Max): 1W (Ta), 1.7W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 30 V
auf Bestellung 17082 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 14+ | 1.59 EUR |
| 22+ | 0.99 EUR |
| 100+ | 0.64 EUR |
| 500+ | 0.49 EUR |
| 1000+ | 0.44 EUR |
| SI2309CDS-T1-E3 |
|
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)