auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.24 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SI2309CDS-T1-E3 Vishay
Description: MOSFET P-CH 60V 1.6A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc), Rds On (Max) @ Id, Vgs: 345mOhm @ 1.25A, 10V, Power Dissipation (Max): 1W (Ta), 1.7W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 30 V.
Weitere Produktangebote SI2309CDS-T1-E3 nach Preis ab 0.12 EUR bis 0.99 EUR
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SI2309CDS-T1-E3 | Hersteller : Vishay |
 Trans MOSFET P-CH 60V 1.6A 3-Pin SOT-23 T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2309CDS-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 60V 1.6A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc) Rds On (Max) @ Id, Vgs: 345mOhm @ 1.25A, 10V Power Dissipation (Max): 1W (Ta), 1.7W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 30 V |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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SI2309CDS-T1-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 60V 1.6A 3-Pin SOT-23 T/R |
auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2309CDS-T1-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 60V 1.6A 3-Pin SOT-23 T/R |
auf Bestellung 20686 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2309CDS-T1-E3 | Hersteller : Vishay Semiconductors |
MOSFETs -60V Vds 20V Vgs SOT-23 |
auf Bestellung 54059 Stücke: Lieferzeit 10-14 Tag (e) |
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SI2309CDS-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 60V 1.6A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc) Rds On (Max) @ Id, Vgs: 345mOhm @ 1.25A, 10V Power Dissipation (Max): 1W (Ta), 1.7W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 4.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 30 V |
auf Bestellung 9799 Stücke: Lieferzeit 10-14 Tag (e) |
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SI2309CDS-T1-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 60V 1.6A 3-Pin SOT-23 T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI2309CDS-T1-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 60V 1.6A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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SI2309CDS-T1-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 60V 1.6A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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| SI2309CDS-T1-E3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -1.3A; Idm: -8A Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -1.3A Pulsed drain current: -8A Power dissipation: 1.7W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.45Ω Mounting: SMD Gate charge: 4.1nC Kind of package: reel; tape Kind of channel: enhancement Technology: TrenchFET® Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI2309CDS-T1-E3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -1.3A; Idm: -8A Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -1.3A Pulsed drain current: -8A Power dissipation: 1.7W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.45Ω Mounting: SMD Gate charge: 4.1nC Kind of package: reel; tape Kind of channel: enhancement Technology: TrenchFET® |
Produkt ist nicht verfügbar |