Weitere Produktangebote SI2312BDS-T1-BE3 nach Preis ab 0.26 EUR bis 1.3 EUR
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SI2312BDS-T1-BE3 | Hersteller : Vishay / Siliconix |
 MOSFETs N-Channel 20 V (D-S) MOSFET |
auf Bestellung 312704 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI2312BDS-T1-BE3 | Hersteller : Vishay |
Trans MOSFET N-CH 20V 3.9A 3-Pin SOT-23 |
auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
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| SI2312BDS-T1-BE3 | Hersteller : Vishay |
Trans MOSFET N-CH 20V 3.9A 3-Pin SOT-23 |
auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2312BDS-T1-BE3 | Hersteller : Vishay Siliconix |
Description: N-CHANNEL 20-V (D-S) MOSFET Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta) Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 4.5V Power Dissipation (Max): 750mW (Ta) Vgs(th) (Max) @ Id: 850mV @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V |
Produkt ist nicht verfügbar |
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SI2312BDS-T1-BE3 | Hersteller : Vishay Siliconix |
Description: N-CHANNEL 20-V (D-S) MOSFET Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta) Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 4.5V Power Dissipation (Max): 750mW (Ta) Vgs(th) (Max) @ Id: 850mV @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V |
Produkt ist nicht verfügbar |