auf Bestellung 329745 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 1.07 EUR |
| 10+ | 0.82 EUR |
| 100+ | 0.58 EUR |
| 500+ | 0.45 EUR |
| 1000+ | 0.37 EUR |
| 3000+ | 0.30 EUR |
| 9000+ | 0.28 EUR |
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Produktbewertung abgeben
Technische Details SI2312BDS-T1-BE3 Vishay / Siliconix
Description: N-CHANNEL 20-V (D-S) MOSFET, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta), Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 4.5V, Power Dissipation (Max): 750mW (Ta), Vgs(th) (Max) @ Id: 850mV @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V.
Weitere Produktangebote SI2312BDS-T1-BE3 nach Preis ab 0.32 EUR bis 1.44 EUR
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SI2312BDS-T1-BE3 | Hersteller : Vishay Siliconix |
 Description: N-CHANNEL 20-V (D-S) MOSFETPackaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta) Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 4.5V Power Dissipation (Max): 750mW (Ta) Vgs(th) (Max) @ Id: 850mV @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V |
auf Bestellung 1452 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI2312BDS-T1-BE3 | Hersteller : Vishay |
Trans MOSFET N-CH 20V 3.9A 3-Pin SOT-23 |
auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
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| SI2312BDS-T1-BE3 | Hersteller : Vishay |
Trans MOSFET N-CH 20V 3.9A 3-Pin SOT-23 |
auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2312BDS-T1-BE3 Produktcode: 184574
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Transistoren > MOSFET N-CH |
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SI2312BDS-T1-BE3 | Hersteller : Vishay Siliconix |
Description: N-CHANNEL 20-V (D-S) MOSFET Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta) Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 4.5V Power Dissipation (Max): 750mW (Ta) Vgs(th) (Max) @ Id: 850mV @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V |
Produkt ist nicht verfügbar |