auf Bestellung 84000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.32 EUR |
| 21000+ | 0.28 EUR |
| 42000+ | 0.26 EUR |
| 63000+ | 0.23 EUR |
Produktrezensionen
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Technische Details SI2312BDS-T1-GE3 Vishay
Description: MOSFET N-CH 20V 3.9A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta), Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 4.5V, Power Dissipation (Max): 750mW (Ta), Vgs(th) (Max) @ Id: 850mV @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V.
Weitere Produktangebote SI2312BDS-T1-GE3 nach Preis ab 0.38 EUR bis 1.33 EUR
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SI2312BDS-T1-GE3 | Hersteller : Vishay Siliconix |
 Description: MOSFET N-CH 20V 3.9A SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta) Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 4.5V Power Dissipation (Max): 750mW (Ta) Vgs(th) (Max) @ Id: 850mV @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V |
auf Bestellung 45000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI2312BDS-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 20V 3.9A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta) Rds On (Max) @ Id, Vgs: 31mOhm @ 5A, 4.5V Power Dissipation (Max): 750mW (Ta) Vgs(th) (Max) @ Id: 850mV @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V |
auf Bestellung 45743 Stücke: Lieferzeit 21-28 Tag (e) |
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SI2312BDS-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFET 20V 5.0A 1.25W 31mohm @ 4.5V |
auf Bestellung 606253 Stücke: Lieferzeit 14-28 Tag (e) |
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SI2312BDS-T1-GE3 Produktcode: 185656 |
IC > IC andere |
Produkt ist nicht verfügbar
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SI2312BDS-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 20V 3.9A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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SI2312BDS-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 20V 3.9A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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SI2312BDS-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 20V 3.9A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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SI2312BDS-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 3.9A; Idm: 15A; 0.48W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 3.9A Pulsed drain current: 15A Power dissipation: 0.48W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 31mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SI2312BDS-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 3.9A; Idm: 15A; 0.48W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 3.9A Pulsed drain current: 15A Power dissipation: 0.48W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 31mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |