auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.18 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SI2312CDS-T1-GE3 Vishay
Description: MOSFET N-CH 20V 6A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Rds On (Max) @ Id, Vgs: 31.8mOhm @ 5A, 4.5V, Power Dissipation (Max): 1.25W (Ta), 2.1W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 865 pF @ 10 V.
Weitere Produktangebote SI2312CDS-T1-GE3 nach Preis ab 0.15 EUR bis 1.02 EUR
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SI2312CDS-T1-GE3 | Hersteller : Vishay |
 Trans MOSFET N-CH 20V 6A 3-Pin SOT-23 T/R |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2312CDS-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 5.1A; 1.3W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 5.1A Power dissipation: 1.3W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 41.4mΩ Mounting: SMD Gate charge: 8.8nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 4232 Stücke: Lieferzeit 7-14 Tag (e) |
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SI2312CDS-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 5.1A; 1.3W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 5.1A Power dissipation: 1.3W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 41.4mΩ Mounting: SMD Gate charge: 8.8nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 4232 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2312CDS-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 20V 6A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 31.8mOhm @ 5A, 4.5V Power Dissipation (Max): 1.25W (Ta), 2.1W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 865 pF @ 10 V |
auf Bestellung 117000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI2312CDS-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 20V 6A 3-Pin SOT-23 T/R |
auf Bestellung 1499 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2312CDS-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 20V 6A 3-Pin SOT-23 T/R |
auf Bestellung 1499 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2312CDS-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 20V 6A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 31.8mOhm @ 5A, 4.5V Power Dissipation (Max): 1.25W (Ta), 2.1W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 865 pF @ 10 V |
auf Bestellung 120054 Stücke: Lieferzeit 21-28 Tag (e) |
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SI2312CDS-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFET 20V Vds 8V Vgs SOT-23 |
auf Bestellung 53952 Stücke: Lieferzeit 14-28 Tag (e) |
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SI2312CDS-T1-GE3 | Hersteller : VISHAY |
Description: VISHAY - SI2312CDS-T1-GE3 - Leistungs-MOSFET, n-Kanal, 20 V, 6 A, 0.0265 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 6A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 450mV euEccn: NLR Verlustleistung: 1.25W Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0265ohm |
auf Bestellung 164372 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2312CDS-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 20V 6A 3-Pin SOT-23 T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2312CDS-T1-GE3 Produktcode: 180745 |
Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
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