SI2314EDS-T1-E3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 3.77A SOT23-3
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Rds On (Max) @ Id, Vgs: 33mOhm @ 5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.77A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Power Dissipation (Max): 750mW (Ta)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.55 EUR |
| 6000+ | 0.5 EUR |
| 9000+ | 0.49 EUR |
| 15000+ | 0.46 EUR |
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Technische Details SI2314EDS-T1-E3 Vishay Siliconix
Description: MOSFET N-CH 20V 3.77A SOT23-3, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Part Status: Active, Supplier Device Package: SOT-23-3 (TO-236), Vgs(th) (Max) @ Id: 950mV @ 250µA, Rds On (Max) @ Id, Vgs: 33mOhm @ 5A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 3.77A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR), Power Dissipation (Max): 750mW (Ta).
Weitere Produktangebote SI2314EDS-T1-E3 nach Preis ab 0.54 EUR bis 2.14 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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SI2314EDS-T1-E3 | Vishay / Siliconix |
MOSFET N-CHANNEL 20-V (D-S) MOSFET |
auf Bestellung 58396 Stücke: Lieferzeit 10-14 Tag (e) |
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SI2314EDS-T1-E3 | Vishay |
Trans MOSFET N-CH 20V 3.77A 3-Pin SOT-23 T/R |
auf Bestellung 839 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2314EDS-T1-E3 | Vishay Siliconix |
Description: MOSFET N-CH 20V 3.77A SOT23-3 Current - Continuous Drain (Id) @ 25°C: 3.77A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: SOT-23-3 (TO-236) Vgs(th) (Max) @ Id: 950mV @ 250µA Power Dissipation (Max): 750mW (Ta) Rds On (Max) @ Id, Vgs: 33mOhm @ 5A, 4.5V |
auf Bestellung 85832 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI2314EDS-T1-E3 | VISHAY |
09+ |
auf Bestellung 3018 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SI2314EDS-T1-E3 |
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Hersteller: Vishay / Siliconix
MOSFET N-CHANNEL 20-V (D-S) MOSFET
MOSFET N-CHANNEL 20-V (D-S) MOSFET
auf Bestellung 58396 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 1.09 EUR |
| 10+ | 0.94 EUR |
| 100+ | 0.65 EUR |
| 500+ | 0.55 EUR |
| 1000+ | 0.54 EUR |
| SI2314EDS-T1-E3 |
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Hersteller: Vishay
Trans MOSFET N-CH 20V 3.77A 3-Pin SOT-23 T/R
Trans MOSFET N-CH 20V 3.77A 3-Pin SOT-23 T/R
auf Bestellung 839 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 108+ | 1.62 EUR |
| SI2314EDS-T1-E3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 20V 3.77A SOT23-3
Current - Continuous Drain (Id) @ 25°C: 3.77A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 750mW (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 5A, 4.5V
Description: MOSFET N-CH 20V 3.77A SOT23-3
Current - Continuous Drain (Id) @ 25°C: 3.77A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Power Dissipation (Max): 750mW (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 5A, 4.5V
auf Bestellung 85832 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 2.14 EUR |
| 16+ | 1.34 EUR |
| 100+ | 0.89 EUR |
| 500+ | 0.69 EUR |
| 1000+ | 0.63 EUR |
| SI2314EDS-T1-E3 |
|
Hersteller: VISHAY
09+
09+
auf Bestellung 3018 Stücke:
Lieferzeit 21-28 Tag (e)