SI2314EDS-T1-E3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 20V 3.77A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.77A (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 5A, 4.5V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 950mV @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
auf Bestellung 84000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.46 EUR |
| 6000+ | 0.42 EUR |
| 9000+ | 0.41 EUR |
| 15000+ | 0.39 EUR |
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Technische Details SI2314EDS-T1-E3 Vishay Siliconix
Description: MOSFET N-CH 20V 3.77A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.77A (Ta), Rds On (Max) @ Id, Vgs: 33mOhm @ 5A, 4.5V, Power Dissipation (Max): 750mW (Ta), Vgs(th) (Max) @ Id: 950mV @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V.
Weitere Produktangebote SI2314EDS-T1-E3 nach Preis ab 0.45 EUR bis 1.8 EUR
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SI2314EDS-T1-E3 | Hersteller : Vishay / Siliconix |
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auf Bestellung 58396 Stücke: Lieferzeit 10-14 Tag (e) |
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SI2314EDS-T1-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 20V 3.77A 3-Pin SOT-23 T/R |
auf Bestellung 839 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2314EDS-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 20V 3.77A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.77A (Ta) Rds On (Max) @ Id, Vgs: 33mOhm @ 5A, 4.5V Power Dissipation (Max): 750mW (Ta) Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V |
auf Bestellung 85832 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI2314EDS-T1-E3 | Hersteller : VISHAY |
09+ |
auf Bestellung 3018 Stücke: Lieferzeit 21-28 Tag (e) |
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SI2314EDS-T1-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 20V 3.77A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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| SI2314EDS-T1-E3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 4.9A; Idm: 15A Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 4.9A Pulsed drain current: 15A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±12V On-state resistance: 51mΩ Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |