auf Bestellung 839 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
232+ | 0.67 EUR |
253+ | 0.6 EUR |
260+ | 0.56 EUR |
500+ | 0.52 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SI2314EDS-T1-E3 Vishay
Description: MOSFET N-CH 20V 3.77A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.77A (Ta), Rds On (Max) @ Id, Vgs: 33mOhm @ 5A, 4.5V, Power Dissipation (Max): 750mW (Ta), Vgs(th) (Max) @ Id: 950mV @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V.
Weitere Produktangebote SI2314EDS-T1-E3 nach Preis ab 0.63 EUR bis 1.92 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
SI2314EDS-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 20V 3.77A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.77A (Ta) Rds On (Max) @ Id, Vgs: 33mOhm @ 5A, 4.5V Power Dissipation (Max): 750mW (Ta) Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V |
auf Bestellung 99000 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||
SI2314EDS-T1-E3 | Hersteller : Vishay / Siliconix | MOSFET N-CHANNEL 20-V (D-S) MOSFET |
auf Bestellung 59579 Stücke: Lieferzeit 14-28 Tag (e) |
|
|||||||||||||
SI2314EDS-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 20V 3.77A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.77A (Ta) Rds On (Max) @ Id, Vgs: 33mOhm @ 5A, 4.5V Power Dissipation (Max): 750mW (Ta) Vgs(th) (Max) @ Id: 950mV @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V |
auf Bestellung 104013 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||
SI2314EDS-T1-E3 | Hersteller : VISHAY | 09+ |
auf Bestellung 3018 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||||
SI2314EDS-T1-E3 | Hersteller : Vishay | Trans MOSFET N-CH 20V 3.77A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
||||||||||||||
SI2314EDS-T1-E3 | Hersteller : Vishay | Trans MOSFET N-CH 20V 3.77A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
||||||||||||||
SI2314EDS-T1-E3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 4.9A; Idm: 15A Mounting: SMD Case: SOT23 Polarisation: unipolar Kind of package: reel; tape Type of transistor: N-MOSFET On-state resistance: 51mΩ Drain current: 4.9A Drain-source voltage: 20V Gate charge: 14nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 15A Power dissipation: 1.25W Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||
SI2314EDS-T1-E3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 4.9A; Idm: 15A Mounting: SMD Case: SOT23 Polarisation: unipolar Kind of package: reel; tape Type of transistor: N-MOSFET On-state resistance: 51mΩ Drain current: 4.9A Drain-source voltage: 20V Gate charge: 14nC Technology: TrenchFET® Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 15A Power dissipation: 1.25W |
Produkt ist nicht verfügbar |