SI2315BDS-T1-E3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET P-CH 12V 3A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.85A, 4.5V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 715 pF @ 6 V
auf Bestellung 42000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.32 EUR |
| 6000+ | 0.29 EUR |
| 9000+ | 0.28 EUR |
| 15000+ | 0.26 EUR |
| 21000+ | 0.25 EUR |
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Technische Details SI2315BDS-T1-E3 Vishay Siliconix
Description: MOSFET P-CH 12V 3A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), Rds On (Max) @ Id, Vgs: 50mOhm @ 3.85A, 4.5V, Power Dissipation (Max): 750mW (Ta), Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 715 pF @ 6 V.
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SI2315BDS-T1-E3 | Hersteller : Vishay |
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SI2315BDS-T1-E3 | Hersteller : Vishay |
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SI2315BDS-T1-E3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -3A; Idm: -12A; 1.19W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -12V Drain current: -3A Pulsed drain current: -12A Power dissipation: 1.19W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 64 Stücke: Lieferzeit 7-14 Tag (e) |
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SI2315BDS-T1-E3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -3A; Idm: -12A; 1.19W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -12V Drain current: -3A Pulsed drain current: -12A Power dissipation: 1.19W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 64 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2315BDS-T1-E3 | Hersteller : Vishay Semiconductors |
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auf Bestellung 150091 Stücke: Lieferzeit 10-14 Tag (e) |
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SI2315BDS-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 12V 3A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 3.85A, 4.5V Power Dissipation (Max): 750mW (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 715 pF @ 6 V |
auf Bestellung 46177 Stücke: Lieferzeit 10-14 Tag (e) |
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SI2315BDS-T1-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 12V 3A 3-Pin SOT-23 T/R |
auf Bestellung 21000 Stücke: Lieferzeit 14-21 Tag (e) |
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| SI2315BDS-T1-E3 | Hersteller : Vishay |
P-MOSFET 12V 3A 50mΩ 750mW SI2315BDS-T1-E3 Vishay TSI2315bds Anzahl je Verpackung: 100 Stücke |
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