SI2315BDS-T1-E3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 3A SOT23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 715 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 750mW (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.85A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
| Anzahl | Preis |
|---|---|
| 3000+ | 0.32 EUR |
| 6000+ | 0.29 EUR |
| 9000+ | 0.28 EUR |
| 15000+ | 0.26 EUR |
| 21000+ | 0.25 EUR |
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Technische Details SI2315BDS-T1-E3 Vishay Siliconix
Description: MOSFET P-CH 12V 3A SOT23-3, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 715 pF @ 6 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V, Drain to Source Voltage (Vdss): 12 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Supplier Device Package: SOT-23-3 (TO-236), Vgs(th) (Max) @ Id: 900mV @ 250µA, Power Dissipation (Max): 750mW (Ta), Rds On (Max) @ Id, Vgs: 50mOhm @ 3.85A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3.
Weitere Produktangebote SI2315BDS-T1-E3 nach Preis ab 0.37 EUR bis 1.34 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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SI2315BDS-T1-E3 | Vishay Semiconductors |
MOSFETs 1.8V 3.2A 1.25W |
auf Bestellung 150091 Stücke: Lieferzeit 10-14 Tag (e) |
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SI2315BDS-T1-E3 | Vishay Siliconix |
Description: MOSFET P-CH 12V 3A SOT23-3 Input Capacitance (Ciss) (Max) @ Vds: 715 pF @ 6 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Drain to Source Voltage (Vdss): 12 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: SOT-23-3 (TO-236) Vgs(th) (Max) @ Id: 900mV @ 250µA Power Dissipation (Max): 750mW (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 3.85A, 4.5V Current - Continuous Drain (Id) @ 25°C: 3A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
auf Bestellung 46177 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI2315BDS-T1-E3 | Vishay |
P-MOSFET 12V 3A 50mΩ 750mW SI2315BDS-T1-E3 Vishay TSI2315bds Anzahl je Verpackung: 100 Stücke |
auf Bestellung 140 Stücke: Lieferzeit 7-14 Tag (e) |
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| SI2315BDS-T1-E3 |
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Hersteller: Vishay Semiconductors
MOSFETs 1.8V 3.2A 1.25W
MOSFETs 1.8V 3.2A 1.25W
auf Bestellung 150091 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 1.34 EUR |
| 10+ | 0.83 EUR |
| 100+ | 0.54 EUR |
| 500+ | 0.41 EUR |
| 1000+ | 0.37 EUR |
| SI2315BDS-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 12V 3A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 715 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 750mW (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.85A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 12V 3A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 715 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 750mW (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 3.85A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 46177 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 14+ | 1.34 EUR |
| 22+ | 0.83 EUR |
| 100+ | 0.54 EUR |
| 500+ | 0.41 EUR |
| 1000+ | 0.37 EUR |
| SI2315BDS-T1-E3 |
|
Hersteller: Vishay
P-MOSFET 12V 3A 50mΩ 750mW SI2315BDS-T1-E3 Vishay TSI2315bds
Anzahl je Verpackung: 100 Stücke
P-MOSFET 12V 3A 50mΩ 750mW SI2315BDS-T1-E3 Vishay TSI2315bds
Anzahl je Verpackung: 100 Stücke
auf Bestellung 140 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 100+ | 0.54 EUR |