SI2316DS-T1-GE3 Vishay

Description: MOSFET N-CH 30V 2.9A SOT23-3, Input Capacitance (Ciss) (Max) @ Vds: 215 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: SOT-23-3 (TO-236), Vgs(th) (Max) @ Id: 800mV @ 250µA (Min), Power Dissipation (Max): 700mW (Ta), Rds On (Max) @ Id, Vgs: 50mOhm @ 3.4A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).