auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.38 EUR |
| 6000+ | 0.35 EUR |
Produktrezensionen
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Technische Details SI2316DS-T1-GE3 Vishay
Description: MOSFET N-CH 30V 2.9A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta), Rds On (Max) @ Id, Vgs: 50mOhm @ 3.4A, 10V, Power Dissipation (Max): 700mW (Ta), Vgs(th) (Max) @ Id: 800mV @ 250µA (Min), Supplier Device Package: SOT-23-3 (TO-236), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 215 pF @ 15 V.
Weitere Produktangebote SI2316DS-T1-GE3 nach Preis ab 0.35 EUR bis 0.39 EUR
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SI2316DS-T1-GE3 | Hersteller : Vishay |
 Trans MOSFET N-CH 30V 2.9A 3-Pin SOT-23 T/R |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2316DS-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 30V 2.9A 3-Pin SOT-23 T/R |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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| SI2316DS-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 3.4A; Idm: 16A Drain-source voltage: 30V Drain current: 3.4A On-state resistance: 85mΩ Type of transistor: N-MOSFET Power dissipation: 0.96W Polarisation: unipolar Kind of package: reel; tape Gate charge: 7nC Technology: TrenchFET® Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 16A Mounting: SMD Case: SOT23 Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SI2316DS-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 30V 2.9A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 3.4A, 10V Power Dissipation (Max): 700mW (Ta) Vgs(th) (Max) @ Id: 800mV @ 250µA (Min) Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 215 pF @ 15 V |
Produkt ist nicht verfügbar |
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SI2316DS-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFETs 30V 3.4A 0.96W 50mohm @ 10V |
Produkt ist nicht verfügbar |
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| SI2316DS-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 3.4A; Idm: 16A Drain-source voltage: 30V Drain current: 3.4A On-state resistance: 85mΩ Type of transistor: N-MOSFET Power dissipation: 0.96W Polarisation: unipolar Kind of package: reel; tape Gate charge: 7nC Technology: TrenchFET® Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 16A Mounting: SMD Case: SOT23 |
Produkt ist nicht verfügbar |