SI2318DS-T1-GE3 VISHAY
Hersteller: VISHAYCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 2.4A; Idm: 16A; 0.75W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 2.4A
Pulsed drain current: 16A
Power dissipation: 0.75W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 58mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1397 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 171+ | 0.42 EUR |
| 190+ | 0.38 EUR |
| 243+ | 0.29 EUR |
| 257+ | 0.28 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SI2318DS-T1-GE3 VISHAY
Description: MOSFET N-CH 40V 3A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), Rds On (Max) @ Id, Vgs: 45mOhm @ 3.9A, 10V, Power Dissipation (Max): 750mW (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 20 V.
Weitere Produktangebote SI2318DS-T1-GE3 nach Preis ab 0.28 EUR bis 1.2 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
SI2318DS-T1-GE3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 2.4A; Idm: 16A; 0.75W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 2.4A Pulsed drain current: 16A Power dissipation: 0.75W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 58mΩ Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1397 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||||||
 |
SI2318DS-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFETs 40V 3.9A 1.25W 45mohm @ 10V |
auf Bestellung 27371 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
 |
SI2318DS-T1-GE3 | Hersteller : VISHAY |
Description: VISHAY - SI2318DS-T1-GE3 - N CHANNEL MOSFET tariffCode: 85412100 Transistormontage: Surface Mount Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 3A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - Unlimited usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 750mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: N Channel Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.045ohm directShipCharge: 25 SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 906 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||||||
 |
SI2318DS-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 40V 3A 3-Pin SOT-23 T/R |
auf Bestellung 162 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||||||
|
|
SI2318DS-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 40V 3A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||
|
|
SI2318DS-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 40V 3A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||
 |
SI2318DS-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 40V 3A 3-Pin SOT-23 |
Produkt ist nicht verfügbar |
|||||||||||||||||
|
|
SI2318DS-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 40V 3A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||
 |
SI2318DS-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 40V 3A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 3.9A, 10V Power Dissipation (Max): 750mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 20 V |
Produkt ist nicht verfügbar |
|||||||||||||||||
|
|
SI2318DS-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 40V 3A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 3.9A, 10V Power Dissipation (Max): 750mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 20 V |
Produkt ist nicht verfügbar |