SI2318DS-T1-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 40V 3A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.9A, 10V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 20 V
auf Bestellung 8486 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.31 EUR |
| 6000+ | 0.29 EUR |
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Technische Details SI2318DS-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 40V 3A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), Rds On (Max) @ Id, Vgs: 45mOhm @ 3.9A, 10V, Power Dissipation (Max): 750mW (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 20 V.
Weitere Produktangebote SI2318DS-T1-GE3 nach Preis ab 0.25 EUR bis 1.34 EUR
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SI2318DS-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFETs 40V 3.9A 1.25W 45mohm @ 10V |
auf Bestellung 86702 Stücke: Lieferzeit 10-14 Tag (e) |
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SI2318DS-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 40V 3A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 3.9A, 10V Power Dissipation (Max): 750mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 20 V |
auf Bestellung 8752 Stücke: Lieferzeit 10-14 Tag (e) |
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SI2318DS-T1-GE3 | Hersteller : VISHAY |
Description: VISHAY - SI2318DS-T1-GE3 - N CHANNEL MOSFET tariffCode: 85412100 Transistormontage: Surface Mount Drain-Source-Spannung Vds: 40V rohsCompliant: YES Dauer-Drainstrom Id: 3A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - Unlimited usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 750mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: N Channel Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.036ohm directShipCharge: 25 SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 5836 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2318DS-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 40V 3A 3-Pin SOT-23 T/R |
auf Bestellung 162 Stücke: Lieferzeit 14-21 Tag (e) |
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| SI2318DS-T1-GE3 | Hersteller : VISHAY |
SI2318DS-T1-GE3 SMD N channel transistors |
auf Bestellung 2515 Stücke: Lieferzeit 7-14 Tag (e) |
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SI2318DS-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 40V 3A 3-Pin SOT-23 T/R |
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SI2318DS-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 40V 3A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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SI2318DS-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 40V 3A 3-Pin SOT-23 |
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SI2318DS-T1-GE3 | Hersteller : Vishay |
Trans MOSFET N-CH 40V 3A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |