SI2323DDS-T1-BE3 Vishay Siliconix

Description: P-CHANNEL 20-V (D-S) MOSFET, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta), 5.3A (Tc), Rds On (Max) @ Id, Vgs: 39mOhm @ 4.1A, 4.5V, Power Dissipation (Max): 960mW (Ta), 1.7W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 1160 pF @ 10 V.