auf Bestellung 7000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 142+ | 1.03 EUR |
| 210+ | 0.67 EUR |
| 250+ | 0.64 EUR |
| 500+ | 0.52 EUR |
| 1000+ | 0.47 EUR |
| 3000+ | 0.38 EUR |
| 6000+ | 0.35 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SI2323DS-T1-GE3 Vishay
Description: MOSFET P-CH 20V 3.7A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), Rds On (Max) @ Id, Vgs: 39mOhm @ 4.7A, 4.5V, Power Dissipation (Max): 750mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V.
Weitere Produktangebote SI2323DS-T1-GE3 nach Preis ab 0.35 EUR bis 1.81 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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SI2323DS-T1-GE3 | Hersteller : VISHAY |
 Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -20V; -3.8A; Idm: -20A; 1.25W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.8A Pulsed drain current: -20A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 68mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2228 Stücke: Lieferzeit 7-14 Tag (e) |
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SI2323DS-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.8A; Idm: -20A; 1.25W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.8A Pulsed drain current: -20A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±8V On-state resistance: 68mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2228 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2323DS-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 20V 3.7A 3-Pin SOT-23 T/R |
auf Bestellung 7000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2323DS-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFETs 20V 4.7A 1.25W 39 mohms @ 4.5V |
auf Bestellung 155568 Stücke: Lieferzeit 10-14 Tag (e) |
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SI2323DS-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 20V 3.7A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta) Rds On (Max) @ Id, Vgs: 39mOhm @ 4.7A, 4.5V Power Dissipation (Max): 750mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V |
auf Bestellung 1735 Stücke: Lieferzeit 10-14 Tag (e) |
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SI2323DS-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 20V 3.7A 3-Pin SOT-23 T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| SI2323DS-T1-GE3 | Hersteller : Vishay |
P-MOSFET 20V 3.7A 39mΩ SI2323DS-T1-GE3 SI2323DS-T1-E3 Vishay TSI2323ds |
auf Bestellung 500 Stücke: Lieferzeit 7-14 Tag (e) |
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| SI2323DS-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 20V 3.7A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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SI2323DS-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 20V 3.7A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta) Rds On (Max) @ Id, Vgs: 39mOhm @ 4.7A, 4.5V Power Dissipation (Max): 750mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V |
Produkt ist nicht verfügbar |