| Anzahl | Preis |
|---|---|
| 119+ | 1.22 EUR |
| 176+ | 0.79 EUR |
| 500+ | 0.63 EUR |
| 1000+ | 0.55 EUR |
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Technische Details SI2323DS-T1-GE3 Vishay
Description: MOSFET P-CH 20V 3.7A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), Rds On (Max) @ Id, Vgs: 39mOhm @ 4.7A, 4.5V, Power Dissipation (Max): 750mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V.
Weitere Produktangebote SI2323DS-T1-GE3 nach Preis ab 0.53 EUR bis 1.8 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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SI2323DS-T1-GE3 | Hersteller : Vishay |
 Trans MOSFET P-CH 20V 3.7A 3-Pin SOT-23 T/R |
auf Bestellung 1359 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2323DS-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFETs 20V 4.7A 1.25W 39 mohms @ 4.5V |
auf Bestellung 155568 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI2323DS-T1-GE3 | Hersteller : Vishay Siliconix |
P-канальний ПТ, Udss, В = 20, Id = 3,7 А, Ptot, Вт = 0,75, Тип монт. = smd, Ciss, пФ @ Uds, В = 1020 @ 10, Qg, нКл = 19 @ 4,5 В, Rds = 39 мОм @ 4,7 A, 4,5 В, Tексп, °C = -55...+150, Ugs(th) = 1 В @ 250 мкА,... Група товару: Транзистори Корпус: SOT-23-3 Од Anzahl je Verpackung: 3000 Stücke |
verfügbar 198 Stücke: |
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| SI2323DS-T1-GE3 | Hersteller : Vishay Siliconix |
MOSFET P-CH 20V 3.7A SOT23-3 Група товару: Транзистори Од. вим: шт |
Produkt ist nicht verfügbar |
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SI2323DS-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 20V 3.7A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta) Rds On (Max) @ Id, Vgs: 39mOhm @ 4.7A, 4.5V Power Dissipation (Max): 750mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 10 V |
Produkt ist nicht verfügbar |