Produkte > VISHAY SILICONIX > SI2325DS-T1-BE3
SI2325DS-T1-BE3

SI2325DS-T1-BE3 Vishay Siliconix

73238.pdf Hersteller: Vishay Siliconix
Description: P-CHANNEL 150-V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 530mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 10V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
auf Bestellung 1982 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
12+1.57 EUR
100+ 1.24 EUR
500+ 1.05 EUR
1000+ 0.85 EUR
Mindestbestellmenge: 12
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Technische Details SI2325DS-T1-BE3 Vishay Siliconix

Description: P-CHANNEL 150-V (D-S) MOSFET, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 530mA (Ta), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 10V, Power Dissipation (Max): 750mW (Ta), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V.

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SI2325DS-T1-BE3 SI2325DS-T1-BE3 Hersteller : Vishay / Siliconix 73238.pdf MOSFET P-CHANNEL 150-V (D-S)
auf Bestellung 53475 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
23+2.35 EUR
28+ 1.91 EUR
100+ 1.49 EUR
500+ 1.38 EUR
3000+ 1.17 EUR
Mindestbestellmenge: 23
SI2325DS-T1-BE3 Hersteller : Vishay 73238.pdf Trans MOSFET P-CH 150V 0.53A 3-Pin SOT-23 T/R
Produkt ist nicht verfügbar
SI2325DS-T1-BE3 Hersteller : Vishay 73238.pdf Trans MOSFET P-CH 150V 0.53A 3-Pin SOT-23 T/R
Produkt ist nicht verfügbar
SI2325DS-T1-BE3 SI2325DS-T1-BE3 Hersteller : Vishay Siliconix 73238.pdf Description: P-CHANNEL 150-V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 530mA (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 10V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
Produkt ist nicht verfügbar