auf Bestellung 42000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.5 EUR |
| 6000+ | 0.45 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SI2325DS-T1-E3 Vishay
Description: MOSFET P-CH 150V 530MA SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 530mA (Ta), Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 10V, Power Dissipation (Max): 750mW (Ta), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V.
Weitere Produktangebote SI2325DS-T1-E3 nach Preis ab 0.45 EUR bis 1.92 EUR
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SI2325DS-T1-E3 | Hersteller : Vishay |
 Trans MOSFET P-CH 150V 0.53A 3-Pin SOT-23 T/R |
auf Bestellung 42000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2325DS-T1-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 150V 0.53A 3-Pin SOT-23 T/R |
auf Bestellung 42000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2325DS-T1-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 150V 0.53A 3-Pin SOT-23 T/R |
auf Bestellung 42000 Stücke: Lieferzeit 14-21 Tag (e) |
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Si2325DS-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 150V 530MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 530mA (Ta) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 10V Power Dissipation (Max): 750mW (Ta) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V |
auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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Si2325DS-T1-E3 | Hersteller : Vishay Semiconductors |
MOSFETs -150V Vds 20V Vgs SOT-23 |
auf Bestellung 17981 Stücke: Lieferzeit 10-14 Tag (e) |
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Si2325DS-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 150V 530MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 530mA (Ta) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 500mA, 10V Power Dissipation (Max): 750mW (Ta) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V |
auf Bestellung 13377 Stücke: Lieferzeit 10-14 Tag (e) |
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SI2325DS-T1-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 150V 0.53A 3-Pin SOT-23 T/R |
auf Bestellung 27 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2325DS-T1-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 150V 0.53A 3-Pin SOT-23 T/R |
auf Bestellung 27 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2325DS-T1-E3 | Hersteller : Vishay |
Trans MOSFET P-CH 150V 0.53A 3-Pin SOT-23 T/R |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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Si2325DS-T1-E3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -150V; -0.43A; Idm: -1.6A; 0.48W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -150V Drain current: -0.43A Pulsed drain current: -1.6A Power dissipation: 0.48W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 1.3Ω Mounting: SMD Gate charge: 7.7nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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Si2325DS-T1-E3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -150V; -0.43A; Idm: -1.6A; 0.48W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -150V Drain current: -0.43A Pulsed drain current: -1.6A Power dissipation: 0.48W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 1.3Ω Mounting: SMD Gate charge: 7.7nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |