auf Bestellung 9000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.28 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SI2328DS-T1-BE3 Vishay
Description: N-CHANNEL 100-V (D-S) MOSFET, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.15A (Ta), Rds On (Max) @ Id, Vgs: 250mOhm @ 1.5A, 10V, Power Dissipation (Max): 730mW (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V.
Weitere Produktangebote SI2328DS-T1-BE3 nach Preis ab 0.34 EUR bis 1.71 EUR
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SI2328DS-T1-BE3 | Hersteller : Vishay |
 Trans MOSFET N-CH 100V 1.15A 3-Pin SOT-23 T/R |
auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2328DS-T1-BE3 | Hersteller : Vishay Siliconix |
Description: N-CHANNEL 100-V (D-S) MOSFET Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.15A (Ta) Rds On (Max) @ Id, Vgs: 250mOhm @ 1.5A, 10V Power Dissipation (Max): 730mW (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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SI2328DS-T1-BE3 | Hersteller : Vishay Siliconix |
Description: N-CHANNEL 100-V (D-S) MOSFET Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.15A (Ta) Rds On (Max) @ Id, Vgs: 250mOhm @ 1.5A, 10V Power Dissipation (Max): 730mW (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V |
auf Bestellung 9605 Stücke: Lieferzeit 10-14 Tag (e) |
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SI2328DS-T1-BE3 | Hersteller : Vishay / Siliconix |
MOSFETs SOT233 100V 1.15A N-CH MOSFET |
auf Bestellung 116373 Stücke: Lieferzeit 10-14 Tag (e) |
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