SI2328DS-T1-E3 Vishay Semiconductors
| Anzahl | Preis |
|---|---|
| 2+ | 2.43 EUR |
| 10+ | 1.65 EUR |
| 100+ | 1.08 EUR |
| 500+ | 0.83 EUR |
| 1000+ | 0.71 EUR |
| 3000+ | 0.64 EUR |
| 6000+ | 0.63 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SI2328DS-T1-E3 Vishay Semiconductors
Description: MOSFET N-CH 100V 1.15A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.15A (Ta), Rds On (Max) @ Id, Vgs: 250mOhm @ 1.5A, 10V, Power Dissipation (Max): 730mW (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V.
Weitere Produktangebote SI2328DS-T1-E3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
SI2328DS-T1-E3 | Hersteller : Vishay |
 Trans MOSFET N-CH 100V 1.15A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
|
| SI2328DS-T1-E3 | Hersteller : Vishay Siliconix |
N-Channel MOSFET, 100V, 1.15A, SOT23 Група товару: Транзистори Од. вим: шт |
Produkt ist nicht verfügbar |
||
 |
SI2328DS-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 100V 1.15A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.15A (Ta) Rds On (Max) @ Id, Vgs: 250mOhm @ 1.5A, 10V Power Dissipation (Max): 730mW (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V |
Produkt ist nicht verfügbar |
|
|
|
SI2328DS-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 100V 1.15A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.15A (Ta) Rds On (Max) @ Id, Vgs: 250mOhm @ 1.5A, 10V Power Dissipation (Max): 730mW (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V |
Produkt ist nicht verfügbar |
|
| SI2328DS-T1-E3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 0.92A; Idm: 6A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.92A Pulsed drain current: 6A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.25Ω Mounting: SMD Gate charge: 5nC Kind of package: reel; tape Kind of channel: enhancement Technology: TrenchFET® |
Produkt ist nicht verfügbar |