auf Bestellung 81000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.37 EUR |
| 42000+ | 0.33 EUR |
| 63000+ | 0.29 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SI2328DS-T1-E3 Vishay
Description: MOSFET N-CH 100V 1.15A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.15A (Ta), Rds On (Max) @ Id, Vgs: 250mOhm @ 1.5A, 10V, Power Dissipation (Max): 730mW (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V.
Weitere Produktangebote SI2328DS-T1-E3 nach Preis ab 0.37 EUR bis 1.78 EUR
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SI2328DS-T1-E3 | Hersteller : Vishay Siliconix |
 Description: MOSFET N-CH 100V 1.15A SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.15A (Ta) Rds On (Max) @ Id, Vgs: 250mOhm @ 1.5A, 10V Power Dissipation (Max): 730mW (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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SI2328DS-T1-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 100V 1.15A 3-Pin SOT-23 T/R |
auf Bestellung 1897 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2328DS-T1-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 100V 1.15A 3-Pin SOT-23 T/R |
auf Bestellung 574 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2328DS-T1-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 100V 1.15A 3-Pin SOT-23 T/R |
auf Bestellung 574 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2328DS-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 100V 1.15A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.15A (Ta) Rds On (Max) @ Id, Vgs: 250mOhm @ 1.5A, 10V Power Dissipation (Max): 730mW (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V |
auf Bestellung 6200 Stücke: Lieferzeit 10-14 Tag (e) |
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SI2328DS-T1-E3 | Hersteller : Vishay Semiconductors |
MOSFETs 100V Vds 20V Vgs SOT-23 |
auf Bestellung 29023 Stücke: Lieferzeit 10-14 Tag (e) |
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SI2328DS-T1-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 100V 1.15A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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SI2328DS-T1-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 100V 1.15A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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| SI2328DS-T1-E3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 1.5A; Idm: 6A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 1.5A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.25Ω Mounting: SMD Gate charge: 5nC Kind of package: reel; tape Kind of channel: enhancement Technology: TrenchFET® Pulsed drain current: 6A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| SI2328DS-T1-E3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 1.5A; Idm: 6A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 1.5A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.25Ω Mounting: SMD Gate charge: 5nC Kind of package: reel; tape Kind of channel: enhancement Technology: TrenchFET® Pulsed drain current: 6A |
Produkt ist nicht verfügbar |