Technische Details SI2328DS-T1-GE3 Vishay
Description: MOSFET N-CH 100V 1.15A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.15A (Ta), Rds On (Max) @ Id, Vgs: 250mOhm @ 1.5A, 10V, Power Dissipation (Max): 730mW (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V.
Weitere Produktangebote SI2328DS-T1-GE3 nach Preis ab 0.45 EUR bis 2.75 EUR
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SI2328DS-T1-GE3 | Vishay |
 Trans MOSFET N-CH 100V 1.15A 3-Pin SOT-23 T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2328DS-T1-GE3 | Vishay |
Trans MOSFET N-CH 100V 1.15A 3-Pin SOT-23 T/R |
auf Bestellung 2362 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2328DS-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 0.92A; Idm: 6A; 1.25W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 0.92A Pulsed drain current: 6A Power dissipation: 1.25W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.25Ω Mounting: SMD Gate charge: 5nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2362 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2328DS-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 100V 1.15A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.15A (Ta) Rds On (Max) @ Id, Vgs: 250mOhm @ 1.5A, 10V Power Dissipation (Max): 730mW (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V |
auf Bestellung 11 Stücke: Lieferzeit 10-14 Tag (e) |
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SI2328DS-T1-GE3 | Vishay |
Trans MOSFET N-CH 100V 1.15A 3-Pin SOT-23 T/R |
auf Bestellung 7 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SI2328DS-T1-GE3 |
|
Hersteller: Vishay
Trans MOSFET N-CH 100V 1.15A 3-Pin SOT-23 T/R
Trans MOSFET N-CH 100V 1.15A 3-Pin SOT-23 T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 3000+ | 0.57 EUR |
| SI2328DS-T1-GE3 |
|
Hersteller: Vishay
Trans MOSFET N-CH 100V 1.15A 3-Pin SOT-23 T/R
Trans MOSFET N-CH 100V 1.15A 3-Pin SOT-23 T/R
auf Bestellung 2362 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 118+ | 1.23 EUR |
| 132+ | 1.09 EUR |
| 500+ | 0.87 EUR |
| 1000+ | 0.74 EUR |
| 1500+ | 0.69 EUR |
| SI2328DS-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.92A; Idm: 6A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.92A
Pulsed drain current: 6A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 0.92A; Idm: 6A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 0.92A
Pulsed drain current: 6A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.25Ω
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2362 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 54+ | 1.34 EUR |
| 73+ | 0.98 EUR |
| 96+ | 0.75 EUR |
| 107+ | 0.67 EUR |
| 500+ | 0.55 EUR |
| 1000+ | 0.48 EUR |
| 1500+ | 0.45 EUR |
| SI2328DS-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 1.15A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.15A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1.5A, 10V
Power Dissipation (Max): 730mW (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Description: MOSFET N-CH 100V 1.15A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.15A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 1.5A, 10V
Power Dissipation (Max): 730mW (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
auf Bestellung 11 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 7+ | 2.75 EUR |
| 11+ | 1.74 EUR |
| SI2328DS-T1-GE3 |
|
Hersteller: Vishay
Trans MOSFET N-CH 100V 1.15A 3-Pin SOT-23 T/R
Trans MOSFET N-CH 100V 1.15A 3-Pin SOT-23 T/R
auf Bestellung 7 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH