SI2329DS-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 6A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.3A, 4.5V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1485 pF @ 4 V
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.44 EUR |
| 6000+ | 0.4 EUR |
| 9000+ | 0.39 EUR |
| 15000+ | 0.37 EUR |
| 21000+ | 0.36 EUR |
| 30000+ | 0.35 EUR |
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Technische Details SI2329DS-T1-GE3 Vishay Siliconix
Description: MOSFET P-CH 8V 6A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Rds On (Max) @ Id, Vgs: 30mOhm @ 5.3A, 4.5V, Power Dissipation (Max): 2.5W (Tc), Vgs(th) (Max) @ Id: 800mV @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Vgs (Max): ±5V, Drain to Source Voltage (Vdss): 8 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1485 pF @ 4 V.
Weitere Produktangebote SI2329DS-T1-GE3 nach Preis ab 0.39 EUR bis 1.82 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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SI2329DS-T1-GE3 | Vishay Semiconductors |
MOSFETs -8V Vds 5V Vgs SOT-23 |
auf Bestellung 34321 Stücke: Lieferzeit 10-14 Tag (e) |
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SI2329DS-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -8V; -6A; 1.6W; SOT23 Mounting: SMD Case: SOT23 Power dissipation: 1.6W Gate charge: 11.8nC Polarisation: unipolar Drain current: -6A Kind of channel: enhancement Drain-source voltage: -8V Type of transistor: P-MOSFET Gate-source voltage: ±5V Kind of package: reel; tape On-state resistance: 30mΩ |
auf Bestellung 2315 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2329DS-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 8V 6A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 5.3A, 4.5V Power Dissipation (Max): 2.5W (Tc) Vgs(th) (Max) @ Id: 800mV @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±5V Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1485 pF @ 4 V |
auf Bestellung 89176 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI2329DS-T1-GE3 |
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Hersteller: Vishay Semiconductors
MOSFETs -8V Vds 5V Vgs SOT-23
MOSFETs -8V Vds 5V Vgs SOT-23
auf Bestellung 34321 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.17 EUR |
| 10+ | 0.79 EUR |
| 100+ | 0.67 EUR |
| 500+ | 0.55 EUR |
| 1000+ | 0.48 EUR |
| 3000+ | 0.43 EUR |
| 6000+ | 0.39 EUR |
| SI2329DS-T1-GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -8V; -6A; 1.6W; SOT23
Mounting: SMD
Case: SOT23
Power dissipation: 1.6W
Gate charge: 11.8nC
Polarisation: unipolar
Drain current: -6A
Kind of channel: enhancement
Drain-source voltage: -8V
Type of transistor: P-MOSFET
Gate-source voltage: ±5V
Kind of package: reel; tape
On-state resistance: 30mΩ
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -8V; -6A; 1.6W; SOT23
Mounting: SMD
Case: SOT23
Power dissipation: 1.6W
Gate charge: 11.8nC
Polarisation: unipolar
Drain current: -6A
Kind of channel: enhancement
Drain-source voltage: -8V
Type of transistor: P-MOSFET
Gate-source voltage: ±5V
Kind of package: reel; tape
On-state resistance: 30mΩ
auf Bestellung 2315 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 69+ | 1.24 EUR |
| 107+ | 0.8 EUR |
| 148+ | 0.57 EUR |
| 169+ | 0.5 EUR |
| 250+ | 0.43 EUR |
| SI2329DS-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 6A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.3A, 4.5V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1485 pF @ 4 V
Description: MOSFET P-CH 8V 6A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.3A, 4.5V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1485 pF @ 4 V
auf Bestellung 89176 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 1.82 EUR |
| 19+ | 1.14 EUR |
| 100+ | 0.74 EUR |
| 500+ | 0.57 EUR |
| 1000+ | 0.51 EUR |