| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.3 EUR |
| 6000+ | 0.26 EUR |
Artikel auf Bestellung
Nicht an unserem Lager — wir beziehen ihn nach Ihrer Bestellung vom Lieferantenlager.
Lieferzeit:
14-21 Tag (e)
Mindestmenge:
3000 Stücke
Produktrezensionen
Produktbewertung abgeben
Technische Details SI2329DS-T1-GE3 Vishay
Description: VISHAY - SI2329DS-T1-GE3 - Leistungs-MOSFET, p-Kanal, 8 V, 6 A, 0.03 ohm, SOT-23, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, euEccn: NLR, Drain-Source-Spannung Vds: 8V, rohsCompliant: YES, Dauer-Drainstrom Id: 6A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, MSL: MSL 1 - unbegrenzt, Gate-Source-Schwellenspannung, max.: 350mV, Verlustleistung: 2.5W, SVHC: No SVHC (04-Feb-2026), Bauform - Transistor: SOT-23, Anzahl der Pins: 3Pin(s), Produktpalette: E, productTraceability: No, usEccn: EAR99, Kanaltyp: p-Kanal, Betriebstemperatur, max.: 150°C, Rds(on)-Prüfspannung: 4.5V, Drain-Source-Durchgangswiderstand: 0.03ohm.
Weitere Produktangebote SI2329DS-T1-GE3 nach Preis ab 0.29 EUR bis 2.27 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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SI2329DS-T1-GE3 | Vishay |
 Trans MOSFET P-CH 8V 6A 3-Pin SOT-23 T/R |
auf Bestellung 39000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2329DS-T1-GE3 | Vishay |
Trans MOSFET P-CH 8V 6A 3-Pin SOT-23 T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2329DS-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 8V 6A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 5.3A, 4.5V Power Dissipation (Max): 2.5W (Tc) Vgs(th) (Max) @ Id: 800mV @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±5V Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1485 pF @ 4 V |
auf Bestellung 75000 Stücke: Lieferzeit 10-14 Tag (e) |
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SI2329DS-T1-GE3 | Vishay |
Trans MOSFET P-CH 8V 6A 3-Pin SOT-23 T/R |
auf Bestellung 12000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2329DS-T1-GE3 | Vishay |
Trans MOSFET P-CH 8V 6A 3-Pin SOT-23 T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2329DS-T1-GE3 | Vishay Semiconductors |
MOSFETs -8V Vds 5V Vgs SOT-23 |
auf Bestellung 26686 Stücke: Lieferzeit 10-14 Tag (e) |
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SI2329DS-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 8V 6A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 5.3A, 4.5V Power Dissipation (Max): 2.5W (Tc) Vgs(th) (Max) @ Id: 800mV @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±5V Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1485 pF @ 4 V |
auf Bestellung 76739 Stücke: Lieferzeit 10-14 Tag (e) |
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SI2329DS-T1-GE3 | VISHAY |
Description: VISHAY - SI2329DS-T1-GE3 - Leistungs-MOSFET, p-Kanal, 8 V, 6 A, 0.03 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 8V rohsCompliant: YES Dauer-Drainstrom Id: 6A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y MSL: MSL 1 - unbegrenzt Gate-Source-Schwellenspannung, max.: 350mV Verlustleistung: 2.5W SVHC: No SVHC (04-Feb-2026) Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: E productTraceability: No usEccn: EAR99 Kanaltyp: p-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 4.5V Drain-Source-Durchgangswiderstand: 0.03ohm |
auf Bestellung 21770 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2329DS-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -8V; -6A; 1.6W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -8V Drain current: -6A Power dissipation: 1.6W Case: SOT23 Gate-source voltage: ±5V On-state resistance: 30mΩ Mounting: SMD Gate charge: 11.8nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2270 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SI2329DS-T1-GE3 |
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Hersteller: Vishay
Trans MOSFET P-CH 8V 6A 3-Pin SOT-23 T/R
Trans MOSFET P-CH 8V 6A 3-Pin SOT-23 T/R
auf Bestellung 39000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.32 EUR |
| 6000+ | 0.29 EUR |
| SI2329DS-T1-GE3 |
|
Hersteller: Vishay
Trans MOSFET P-CH 8V 6A 3-Pin SOT-23 T/R
Trans MOSFET P-CH 8V 6A 3-Pin SOT-23 T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.42 EUR |
| SI2329DS-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 6A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.3A, 4.5V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1485 pF @ 4 V
Description: MOSFET P-CH 8V 6A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.3A, 4.5V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1485 pF @ 4 V
auf Bestellung 75000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.45 EUR |
| 9000+ | 0.4 EUR |
| SI2329DS-T1-GE3 |
|
Hersteller: Vishay
Trans MOSFET P-CH 8V 6A 3-Pin SOT-23 T/R
Trans MOSFET P-CH 8V 6A 3-Pin SOT-23 T/R
auf Bestellung 12000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.58 EUR |
| 12000+ | 0.52 EUR |
| SI2329DS-T1-GE3 |
|
Hersteller: Vishay
Trans MOSFET P-CH 8V 6A 3-Pin SOT-23 T/R
Trans MOSFET P-CH 8V 6A 3-Pin SOT-23 T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.61 EUR |
| SI2329DS-T1-GE3 |
|
Hersteller: Vishay Semiconductors
MOSFETs -8V Vds 5V Vgs SOT-23
MOSFETs -8V Vds 5V Vgs SOT-23
auf Bestellung 26686 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 1.83 EUR |
| 10+ | 0.84 EUR |
| 100+ | 0.75 EUR |
| 500+ | 0.57 EUR |
| 1000+ | 0.55 EUR |
| 3000+ | 0.43 EUR |
| SI2329DS-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 8V 6A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.3A, 4.5V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1485 pF @ 4 V
Description: MOSFET P-CH 8V 6A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 5.3A, 4.5V
Power Dissipation (Max): 2.5W (Tc)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±5V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1485 pF @ 4 V
auf Bestellung 76739 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 1.88 EUR |
| 18+ | 1.17 EUR |
| 50+ | 0.86 EUR |
| 100+ | 0.76 EUR |
| 500+ | 0.58 EUR |
| SI2329DS-T1-GE3 |
|
Hersteller: VISHAY
Description: VISHAY - SI2329DS-T1-GE3 - Leistungs-MOSFET, p-Kanal, 8 V, 6 A, 0.03 ohm, SOT-23, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 8V
rohsCompliant: YES
Dauer-Drainstrom Id: 6A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 350mV
Verlustleistung: 2.5W
SVHC: No SVHC (04-Feb-2026)
Bauform - Transistor: SOT-23
Anzahl der Pins: 3Pin(s)
Produktpalette: E
productTraceability: No
usEccn: EAR99
Kanaltyp: p-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 4.5V
Drain-Source-Durchgangswiderstand: 0.03ohm
Description: VISHAY - SI2329DS-T1-GE3 - Leistungs-MOSFET, p-Kanal, 8 V, 6 A, 0.03 ohm, SOT-23, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
euEccn: NLR
Drain-Source-Spannung Vds: 8V
rohsCompliant: YES
Dauer-Drainstrom Id: 6A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
MSL: MSL 1 - unbegrenzt
Gate-Source-Schwellenspannung, max.: 350mV
Verlustleistung: 2.5W
SVHC: No SVHC (04-Feb-2026)
Bauform - Transistor: SOT-23
Anzahl der Pins: 3Pin(s)
Produktpalette: E
productTraceability: No
usEccn: EAR99
Kanaltyp: p-Kanal
Betriebstemperatur, max.: 150°C
Rds(on)-Prüfspannung: 4.5V
Drain-Source-Durchgangswiderstand: 0.03ohm
auf Bestellung 21770 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 111+ | 2.27 EUR |
| 177+ | 1.32 EUR |
| 272+ | 0.79 EUR |
| 500+ | 0.61 EUR |
| 5000+ | 0.48 EUR |
| SI2329DS-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -8V; -6A; 1.6W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -8V
Drain current: -6A
Power dissipation: 1.6W
Case: SOT23
Gate-source voltage: ±5V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 11.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -8V; -6A; 1.6W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -8V
Drain current: -6A
Power dissipation: 1.6W
Case: SOT23
Gate-source voltage: ±5V
On-state resistance: 30mΩ
Mounting: SMD
Gate charge: 11.8nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2270 Stücke:
Lieferzeit 14-21 Tag (e)