auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.56 EUR |
Produktrezensionen
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Technische Details SI2329DS-T1-GE3 Vishay
Description: MOSFET P-CH 8V 6A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), Rds On (Max) @ Id, Vgs: 30mOhm @ 5.3A, 4.5V, Power Dissipation (Max): 2.5W (Tc), Vgs(th) (Max) @ Id: 800mV @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Vgs (Max): ±5V, Drain to Source Voltage (Vdss): 8 V, Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1485 pF @ 4 V.
Weitere Produktangebote SI2329DS-T1-GE3 nach Preis ab 0.25 EUR bis 1.38 EUR
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SI2329DS-T1-GE3 | Hersteller : Vishay |
 Trans MOSFET P-CH 8V 6A 3-Pin SOT-23 T/R |
auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2329DS-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 8V 6A 3-Pin SOT-23 T/R |
auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2329DS-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 8V 6A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 5.3A, 4.5V Power Dissipation (Max): 2.5W (Tc) Vgs(th) (Max) @ Id: 800mV @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±5V Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1485 pF @ 4 V |
auf Bestellung 1280 Stücke: Lieferzeit 21-28 Tag (e) |
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SI2329DS-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFET -8V Vds 5V Vgs SOT-23 |
auf Bestellung 98368 Stücke: Lieferzeit 14-28 Tag (e) |
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SI2329DS-T1-GE3 | Hersteller : VISHAY |
Description: VISHAY - SI2329DS-T1-GE3 - Leistungs-MOSFET, p-Kanal, 8 V, 6 A, 0.025 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 8V rohsCompliant: YES Dauer-Drainstrom Id: 6A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 350mV euEccn: NLR Verlustleistung: 2.5W Anzahl der Pins: 3Pin(s) productTraceability: No Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.025ohm |
auf Bestellung 53257 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2329DS-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 8V 6A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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| SI2329DS-T1-GE3 | Hersteller : VISHAY |
Description: VISHAY - SI2329DS-T1-GE3 - P-CHANNEL 8-V (D-S) MOSFET 27AK0994 |
Produkt ist nicht verfügbar |
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SI2329DS-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -8V; -6A; 1.6W; SOT23 Kind of package: reel; tape Drain-source voltage: -8V Drain current: -6A On-state resistance: 30mΩ Type of transistor: P-MOSFET Power dissipation: 1.6W Polarisation: unipolar Gate charge: 11.8nC Kind of channel: enhanced Gate-source voltage: ±5V Mounting: SMD Case: SOT23 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SI2329DS-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 8V 6A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 30mOhm @ 5.3A, 4.5V Power Dissipation (Max): 2.5W (Tc) Vgs(th) (Max) @ Id: 800mV @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±5V Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1485 pF @ 4 V |
Produkt ist nicht verfügbar |
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SI2329DS-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -8V; -6A; 1.6W; SOT23 Kind of package: reel; tape Drain-source voltage: -8V Drain current: -6A On-state resistance: 30mΩ Type of transistor: P-MOSFET Power dissipation: 1.6W Polarisation: unipolar Gate charge: 11.8nC Kind of channel: enhanced Gate-source voltage: ±5V Mounting: SMD Case: SOT23 |
Produkt ist nicht verfügbar |