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SI2333CDS-T1-BE3

SI2333CDS-T1-BE3 Vishay Siliconix

si2333cd.pdf Hersteller: Vishay Siliconix
Description: P-CHANNEL 12-V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta), 7.1A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5.1A, 4.5V
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1225 pF @ 6 V
auf Bestellung 1444 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
19+0.97 EUR
100+ 0.72 EUR
500+ 0.56 EUR
1000+ 0.46 EUR
Mindestbestellmenge: 19
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Technische Details SI2333CDS-T1-BE3 Vishay Siliconix

Description: P-CHANNEL 12-V (D-S) MOSFET, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta), 7.1A (Tc), Rds On (Max) @ Id, Vgs: 35mOhm @ 5.1A, 4.5V, Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1225 pF @ 6 V.

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Preis ohne MwSt
SI2333CDS-T1-BE3 SI2333CDS-T1-BE3 Hersteller : Vishay / Siliconix si2333cd.pdf MOSFET P-CHANNEL 12-V (D-S)
auf Bestellung 184863 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
30+1.74 EUR
34+ 1.53 EUR
100+ 1.11 EUR
3000+ 0.94 EUR
6000+ 0.78 EUR
9000+ 0.77 EUR
Mindestbestellmenge: 30
SI2333CDS-T1-BE3 Hersteller : Vishay si2333cd.pdf P Channel 12 V D S Mosfet
Produkt ist nicht verfügbar
SI2333CDS-T1-BE3 SI2333CDS-T1-BE3 Hersteller : Vishay Siliconix si2333cd.pdf Description: P-CHANNEL 12-V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta), 7.1A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 5.1A, 4.5V
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1225 pF @ 6 V
Produkt ist nicht verfügbar