Produkte > VISHAY SILICONIX > SI2333DDS-T1-BE3
SI2333DDS-T1-BE3

SI2333DDS-T1-BE3 Vishay Siliconix

si2333dds.pdf Hersteller: Vishay Siliconix
Description: P-CHANNEL 12-V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 6A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.2W (Ta), 1.7W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1275 pF @ 6 V
auf Bestellung 5331 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.32 EUR
Mindestbestellmenge: 3000
Produktrezensionen
Produktbewertung abgeben

Technische Details SI2333DDS-T1-BE3 Vishay Siliconix

Description: P-CHANNEL 12-V (D-S) MOSFET, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 6A (Tc), Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 4.5V, Power Dissipation (Max): 1.2W (Ta), 1.7W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 1275 pF @ 6 V.

Weitere Produktangebote SI2333DDS-T1-BE3 nach Preis ab 0.36 EUR bis 0.97 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
SI2333DDS-T1-BE3 SI2333DDS-T1-BE3 Hersteller : Vishay Siliconix si2333dds.pdf Description: P-CHANNEL 12-V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 6A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 4.5V
Power Dissipation (Max): 1.2W (Ta), 1.7W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1275 pF @ 6 V
auf Bestellung 5331 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
28+0.96 EUR
32+ 0.82 EUR
100+ 0.57 EUR
500+ 0.45 EUR
1000+ 0.36 EUR
Mindestbestellmenge: 28
SI2333DDS-T1-BE3 SI2333DDS-T1-BE3 Hersteller : Vishay / Siliconix si2333dds.pdf MOSFET P-CHANNEL 12-V (D-S)
auf Bestellung 41964 Stücke:
Lieferzeit 14-28 Tag (e)
Anzahl Preis ohne MwSt
54+0.97 EUR
63+ 0.83 EUR
100+ 0.62 EUR
500+ 0.49 EUR
1000+ 0.43 EUR
3000+ 0.36 EUR
Mindestbestellmenge: 54
SI2333DDS-T1-BE3 Hersteller : Vishay si2333dds.pdf Trans MOSFET P-CH 12V 6A 3-Pin SOT-23 T/R
Produkt ist nicht verfügbar