| Anzahl | Preis |
|---|---|
| 113+ | 1.29 EUR |
| 122+ | 1.17 EUR |
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Technische Details SI2337DS-T1-GE3 Vishay
Description: MOSFET P-CH 80V 2.2A SOT23-3, Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Supplier Device Package: SOT-23-3 (TO-236), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 760mW (Ta), 2.5W (Tc), Rds On (Max) @ Id, Vgs: 270mOhm @ 1.2A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -50°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Weitere Produktangebote SI2337DS-T1-GE3 nach Preis ab 0.63 EUR bis 2.75 EUR
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SI2337DS-T1-GE3 | VISHAY |
 Category: SMD P channel transistorsDescription: Transistor: P-MOSFET; unipolar; -80V; -1.75A; Idm: -7A; 1.6W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -80V Drain current: -1.75A Pulsed drain current: -7A Power dissipation: 1.6W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 0.27Ω Mounting: SMD Gate charge: 17nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 261 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2337DS-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 80V 2.2A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -50°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc) Rds On (Max) @ Id, Vgs: 270mOhm @ 1.2A, 10V Power Dissipation (Max): 760mW (Ta), 2.5W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 40 V |
auf Bestellung 903 Stücke: Lieferzeit 10-14 Tag (e) |
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SI2337DS-T1-GE3 | Vishay Semiconductors |
MOSFETs -80V Vds 20V Vgs SOT-23 |
auf Bestellung 11975 Stücke: Lieferzeit 10-14 Tag (e) |
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SI2337DS-T1-GE3 | Vishay |
Trans MOSFET P-CH 80V 2.2A 3-Pin SOT-23 T/R |
auf Bestellung 10 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| SI2337DS-T1-GE3 | Vishay |
P-MOSFET 2.2A 80V 2.5W 0.27Ω SI2337DS-T1-E3 SI2337DS-T1-GE3 TSI2337ds Anzahl je Verpackung: 10 Stücke |
auf Bestellung 10 Stücke: Lieferzeit 7-14 Tag (e) |
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| SI2337DS-T1-GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -80V; -1.75A; Idm: -7A; 1.6W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -80V
Drain current: -1.75A
Pulsed drain current: -7A
Power dissipation: 1.6W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -80V; -1.75A; Idm: -7A; 1.6W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -80V
Drain current: -1.75A
Pulsed drain current: -7A
Power dissipation: 1.6W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 261 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 55+ | 1.32 EUR |
| 78+ | 0.92 EUR |
| 93+ | 0.78 EUR |
| 100+ | 0.72 EUR |
| SI2337DS-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 80V 2.2A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 1.2A, 10V
Power Dissipation (Max): 760mW (Ta), 2.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 40 V
Description: MOSFET P-CH 80V 2.2A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Rds On (Max) @ Id, Vgs: 270mOhm @ 1.2A, 10V
Power Dissipation (Max): 760mW (Ta), 2.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 40 V
auf Bestellung 903 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 12+ | 1.55 EUR |
| 14+ | 1.27 EUR |
| 100+ | 0.99 EUR |
| 500+ | 0.84 EUR |
| SI2337DS-T1-GE3 |
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Hersteller: Vishay Semiconductors
MOSFETs -80V Vds 20V Vgs SOT-23
MOSFETs -80V Vds 20V Vgs SOT-23
auf Bestellung 11975 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 2.15 EUR |
| 10+ | 1.29 EUR |
| 100+ | 1 EUR |
| 250+ | 0.99 EUR |
| 500+ | 0.8 EUR |
| 1000+ | 0.7 EUR |
| 3000+ | 0.63 EUR |
| SI2337DS-T1-GE3 |
|
Hersteller: Vishay
Trans MOSFET P-CH 80V 2.2A 3-Pin SOT-23 T/R
Trans MOSFET P-CH 80V 2.2A 3-Pin SOT-23 T/R
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH
| SI2337DS-T1-GE3 |
|
Hersteller: Vishay
P-MOSFET 2.2A 80V 2.5W 0.27Ω SI2337DS-T1-E3 SI2337DS-T1-GE3 TSI2337ds
Anzahl je Verpackung: 10 Stücke
P-MOSFET 2.2A 80V 2.5W 0.27Ω SI2337DS-T1-E3 SI2337DS-T1-GE3 TSI2337ds
Anzahl je Verpackung: 10 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 10+ | 2.75 EUR |