SI2337DS-T1-GE3 Vishay

Description: MOSFET P-CH 80V 2.2A SOT23-3, Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 40 V, Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V, Drain to Source Voltage (Vdss): 80 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Supplier Device Package: SOT-23-3 (TO-236), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 760mW (Ta), 2.5W (Tc), Rds On (Max) @ Id, Vgs: 270mOhm @ 1.2A, 10V, Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -50°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).