auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.29 EUR |
| 6000+ | 0.27 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SI2343CDS-T1-GE3 Vishay
Description: MOSFET P-CH 30V 5.9A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 5.9A (Tc), Rds On (Max) @ Id, Vgs: 45mOhm @ 4.2A, 10V, Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 15 V.
Weitere Produktangebote SI2343CDS-T1-GE3 nach Preis ab 0.22 EUR bis 1.16 EUR
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SI2343CDS-T1-GE3 | Hersteller : Vishay |
 Trans MOSFET P-CH 30V 5.9A 3-Pin SOT-23 T/R |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2343CDS-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 30V 5.9A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.9A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 4.2A, 10V Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 15 V |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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SI2343CDS-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 30V 5.9A 3-Pin SOT-23 T/R |
auf Bestellung 24000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2343CDS-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 30V 5.9A 3-Pin SOT-23 T/R |
auf Bestellung 24000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2343CDS-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 30V 5.9A 3-Pin SOT-23 T/R |
auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2343CDS-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 30V 5.9A 3-Pin SOT-23 T/R |
auf Bestellung 883 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2343CDS-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 30V 5.9A 3-Pin SOT-23 T/R |
auf Bestellung 883 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2343CDS-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 30V 5.9A 3-Pin SOT-23 T/R |
auf Bestellung 5728 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2343CDS-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -5.9A; Idm: -25A; 1.6W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -5.9A Pulsed drain current: -25A Power dissipation: 1.6W Case: SOT23 On-state resistance: 45mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhancement Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2252 Stücke: Lieferzeit 7-14 Tag (e) |
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SI2343CDS-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -5.9A; Idm: -25A; 1.6W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -5.9A Pulsed drain current: -25A Power dissipation: 1.6W Case: SOT23 On-state resistance: 45mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhancement Gate-source voltage: ±20V |
auf Bestellung 2252 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2343CDS-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFETs -30V Vds 20V Vgs SOT-23 |
auf Bestellung 25586 Stücke: Lieferzeit 10-14 Tag (e) |
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SI2343CDS-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 30V 5.9A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 5.9A (Tc) Rds On (Max) @ Id, Vgs: 45mOhm @ 4.2A, 10V Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 15 V |
auf Bestellung 7849 Stücke: Lieferzeit 10-14 Tag (e) |
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SI2343CDS-T1-GE3 | Hersteller : VISHAY |
Description: VISHAY - SI2343CDS-T1-GE3 - MOSFET, P CHANNEL, -30V, -5.9A, SOT-23-3 tariffCode: 85412900 Transistormontage: Surface Mount Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 5.9A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.2V euEccn: NLR Verlustleistung: 2.5W Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: P Channel Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.037ohm directShipCharge: 25 SVHC: No SVHC (07-Nov-2024) |
auf Bestellung 5253 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2343CDS-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 30V 4.2A 3-Pin SOT-23 T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |