SI2343DS-T1-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET P-CH 30V 3.1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 53mOhm @ 4A, 10V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.4 EUR |
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Technische Details SI2343DS-T1-GE3 Vishay Siliconix
Description: MOSFET P-CH 30V 3.1A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta), Rds On (Max) @ Id, Vgs: 53mOhm @ 4A, 10V, Power Dissipation (Max): 750mW (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 15 V.
Weitere Produktangebote SI2343DS-T1-GE3 nach Preis ab 0.4 EUR bis 1.64 EUR
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SI2343DS-T1-GE3 | Hersteller : Vishay |
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auf Bestellung 20337 Stücke: Lieferzeit 10-14 Tag (e) |
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SI2343DS-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 30V 3.1A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta) Rds On (Max) @ Id, Vgs: 53mOhm @ 4A, 10V Power Dissipation (Max): 750mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 15 V |
auf Bestellung 4245 Stücke: Lieferzeit 10-14 Tag (e) |
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SI2343DS-T1-GE3 | Hersteller : VISHAY |
Description: VISHAY - SI2343DS-T1-GE3 - P CHANNEL MOSFET, -30V, 4A, TO-236 tariffCode: 85412100 MSL: MSL 1 - Unlimited productTraceability: Yes-Date/Lot Code rohsCompliant: YES Anzahl der Pins: 3Pin(s) euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - directShipCharge: 25 usEccn: EAR99 |
auf Bestellung 5746 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2343DS-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 30V 3.1A 3-Pin SOT-23 T/R |
auf Bestellung 102 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2343DS-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 30V 3.1A 3-Pin SOT-23 T/R |
auf Bestellung 102 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2343DS-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 30V 3.1A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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