SI2343DS-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 3.1A SOT23-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 750mW (Ta)
Rds On (Max) @ Id, Vgs: 53mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
| Anzahl | Preis |
|---|---|
| 3000+ | 0.4 EUR |
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Technische Details SI2343DS-T1-GE3 Vishay Siliconix
Description: MOSFET P-CH 30V 3.1A SOT23-3, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: SOT-23-3 (TO-236), Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 750mW (Ta), Rds On (Max) @ Id, Vgs: 53mOhm @ 4A, 10V, Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V.
Weitere Produktangebote SI2343DS-T1-GE3 nach Preis ab 0.42 EUR bis 1.64 EUR
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SI2343DS-T1-GE3 | Vishay Semiconductors |
MOSFETs 30V 4.0A 1.25W 53mohm @ 10V |
auf Bestellung 20337 Stücke: Lieferzeit 10-14 Tag (e) |
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SI2343DS-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 30V 3.1A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta) Rds On (Max) @ Id, Vgs: 53mOhm @ 4A, 10V Power Dissipation (Max): 750mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 15 V |
auf Bestellung 4245 Stücke: Lieferzeit 10-14 Tag (e) |
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SI2343DS-T1-GE3 | VISHAY |
Description: VISHAY - SI2343DS-T1-GE3 - P CHANNEL MOSFET, -30V, 4A, TO-236 tariffCode: 85412100 MSL: MSL 1 - Unlimited productTraceability: Yes-Date/Lot Code rohsCompliant: YES Anzahl der Pins: 3Pin(s) euEccn: NLR isCanonical: Y hazardous: false Drain-Source-Durchgangswiderstand: 53mohm rohsPhthalatesCompliant: YES Qualifikation: - directShipCharge: 25 usEccn: EAR99 |
auf Bestellung 15 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SI2343DS-T1-GE3 |
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Hersteller: Vishay Semiconductors
MOSFETs 30V 4.0A 1.25W 53mohm @ 10V
MOSFETs 30V 4.0A 1.25W 53mohm @ 10V
auf Bestellung 20337 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 0.9 EUR |
| 10+ | 0.78 EUR |
| 100+ | 0.6 EUR |
| 500+ | 0.48 EUR |
| 1000+ | 0.42 EUR |
| SI2343DS-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 3.1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 53mOhm @ 4A, 10V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 15 V
Description: MOSFET P-CH 30V 3.1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Ta)
Rds On (Max) @ Id, Vgs: 53mOhm @ 4A, 10V
Power Dissipation (Max): 750mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 15 V
auf Bestellung 4245 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 11+ | 1.64 EUR |
| 18+ | 1.02 EUR |
| 100+ | 0.67 EUR |
| 500+ | 0.51 EUR |
| 1000+ | 0.46 EUR |
| SI2343DS-T1-GE3 |
|
Hersteller: VISHAY
Description: VISHAY - SI2343DS-T1-GE3 - P CHANNEL MOSFET, -30V, 4A, TO-236
tariffCode: 85412100
MSL: MSL 1 - Unlimited
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
Anzahl der Pins: 3Pin(s)
euEccn: NLR
isCanonical: Y
hazardous: false
Drain-Source-Durchgangswiderstand: 53mohm
rohsPhthalatesCompliant: YES
Qualifikation: -
directShipCharge: 25
usEccn: EAR99
Description: VISHAY - SI2343DS-T1-GE3 - P CHANNEL MOSFET, -30V, 4A, TO-236
tariffCode: 85412100
MSL: MSL 1 - Unlimited
productTraceability: Yes-Date/Lot Code
rohsCompliant: YES
Anzahl der Pins: 3Pin(s)
euEccn: NLR
isCanonical: Y
hazardous: false
Drain-Source-Durchgangswiderstand: 53mohm
rohsPhthalatesCompliant: YES
Qualifikation: -
directShipCharge: 25
usEccn: EAR99
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH