SI2351DS-T1-E3
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Technische Details SI2351DS-T1-E3
Description: MOSFET P-CH 20V 2.8A SOT23-3, Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 5 V, Drain to Source Voltage (Vdss): 20 V, Supplier Device Package: SOT-23-3 (TO-236), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Rds On (Max) @ Id, Vgs: 115mOhm @ 2.4A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Cut Tape (CT).
Weitere Produktangebote SI2351DS-T1-E3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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SI2351DS-T1-E3 | Vishay Siliconix |
Description: MOSFET P-CH 20V 2.8A SOT23-3 Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 5 V Drain to Source Voltage (Vdss): 20 V Supplier Device Package: SOT-23-3 (TO-236) Vgs(th) (Max) @ Id: 1.5V @ 250µA Rds On (Max) @ Id, Vgs: 115mOhm @ 2.4A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
SI2351DS-T1-E3 | Vishay / Siliconix |
 MOSFET RECOMMENDED ALT 781-SI2301CDS-T1-GE3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SI2351DS-T1-E3 |
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 2.8A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 5 V
Drain to Source Voltage (Vdss): 20 V
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 115mOhm @ 2.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 20V 2.8A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 5 V
Drain to Source Voltage (Vdss): 20 V
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Rds On (Max) @ Id, Vgs: 115mOhm @ 2.4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SI2351DS-T1-E3 |
|
Hersteller: Vishay / Siliconix
MOSFET RECOMMENDED ALT 781-SI2301CDS-T1-GE3
MOSFET RECOMMENDED ALT 781-SI2301CDS-T1-GE3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH