SI2351DS-T1-E3
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Technische Details SI2351DS-T1-E3
Description: MOSFET P-CH 20V 2.8A SOT23-3, Packaging: Cut Tape (CT), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc), Rds On (Max) @ Id, Vgs: 115mOhm @ 2.4A, 4.5V, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 10 V.
Weitere Produktangebote SI2351DS-T1-E3
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SI2351DS-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 20V 2.8A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) Rds On (Max) @ Id, Vgs: 115mOhm @ 2.4A, 4.5V Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 10 V |
Produkt ist nicht verfügbar |
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SI2351DS-T1-E3 | Hersteller : Vishay / Siliconix |
 MOSFET RECOMMENDED ALT 781-SI2301CDS-T1-GE3 |
Produkt ist nicht verfügbar |