| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.29 EUR |
| 6000+ | 0.25 EUR |
| 9000+ | 0.19 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SI2366DS-T1-GE3 Vishay
Description: VISHAY - SI2366DS-T1-GE3 - Leistungs-MOSFET, n-Kanal, 30 V, 5.8 A, 0.03 ohm, SOT-23, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 30V, rohsCompliant: YES, Dauer-Drainstrom Id: 5.8A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 1.2V, euEccn: NLR, Verlustleistung: 2.1W, Bauform - Transistor: SOT-23, Anzahl der Pins: 3Pin(s), Produktpalette: -, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 10V, Betriebstemperatur, max.: 150°C, Drain-Source-Durchgangswiderstand: 0.03ohm, SVHC: No SVHC (07-Nov-2024).
Weitere Produktangebote SI2366DS-T1-GE3 nach Preis ab 0.2 EUR bis 1.34 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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SI2366DS-T1-GE3 | Vishay |
 Trans MOSFET N-CH 30V 5.8A 3-Pin SOT-23 T/R |
auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2366DS-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 5.8A SOT23-3 Input Capacitance (Ciss) (Max) @ Vds: 335 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: SOT-23-3 (TO-236) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 1.25W (Ta), 2.1W (Tc) Rds On (Max) @ Id, Vgs: 36mOhm @ 4.5A, 10V Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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SI2366DS-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; Idm: 20A; 1.3W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 5.8A Pulsed drain current: 20A Power dissipation: 1.3W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 36mΩ Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 3218 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2366DS-T1-GE3 | Vishay / Siliconix |
MOSFETs 30V Vds 20V Vgs SOT-23 |
auf Bestellung 1590 Stücke: Lieferzeit 10-14 Tag (e) |
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SI2366DS-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 5.8A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc) Rds On (Max) @ Id, Vgs: 36mOhm @ 4.5A, 10V Power Dissipation (Max): 1.25W (Ta), 2.1W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 335 pF @ 15 V |
auf Bestellung 6837 Stücke: Lieferzeit 10-14 Tag (e) |
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SI2366DS-T1-GE3 | VISHAY |
Description: VISHAY - SI2366DS-T1-GE3 - Leistungs-MOSFET, n-Kanal, 30 V, 5.8 A, 0.03 ohm, SOT-23, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 30V rohsCompliant: YES Dauer-Drainstrom Id: 5.8A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.2V euEccn: NLR Verlustleistung: 2.1W Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.03ohm SVHC: No SVHC (07-Nov-2024) |
auf Bestellung 14584 Stücke: Lieferzeit 14-21 Tag (e) |
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| SI2366DS-T1-GE3 |
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Hersteller: Vishay
Trans MOSFET N-CH 30V 5.8A 3-Pin SOT-23 T/R
Trans MOSFET N-CH 30V 5.8A 3-Pin SOT-23 T/R
auf Bestellung 9000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.29 EUR |
| 6000+ | 0.25 EUR |
| 9000+ | 0.2 EUR |
| SI2366DS-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 5.8A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 335 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.25W (Ta), 2.1W (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 5.8A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 335 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.25W (Ta), 2.1W (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.31 EUR |
| 6000+ | 0.29 EUR |
| SI2366DS-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; Idm: 20A; 1.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.8A
Pulsed drain current: 20A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; Idm: 20A; 1.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.8A
Pulsed drain current: 20A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3218 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 91+ | 0.94 EUR |
| 128+ | 0.67 EUR |
| 185+ | 0.46 EUR |
| 217+ | 0.39 EUR |
| 500+ | 0.29 EUR |
| 1000+ | 0.25 EUR |
| 3000+ | 0.21 EUR |
| SI2366DS-T1-GE3 |
|
Hersteller: Vishay / Siliconix
MOSFETs 30V Vds 20V Vgs SOT-23
MOSFETs 30V Vds 20V Vgs SOT-23
auf Bestellung 1590 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 1.05 EUR |
| 10+ | 0.73 EUR |
| 100+ | 0.5 EUR |
| 500+ | 0.39 EUR |
| 1000+ | 0.35 EUR |
| 3000+ | 0.3 EUR |
| 6000+ | 0.27 EUR |
| SI2366DS-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 5.8A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.25W (Ta), 2.1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 335 pF @ 15 V
Description: MOSFET N-CH 30V 5.8A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.25W (Ta), 2.1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 335 pF @ 15 V
auf Bestellung 6837 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 20+ | 1.09 EUR |
| 28+ | 0.75 EUR |
| 100+ | 0.51 EUR |
| 500+ | 0.43 EUR |
| 1000+ | 0.38 EUR |
| SI2366DS-T1-GE3 |
|
Hersteller: VISHAY
Description: VISHAY - SI2366DS-T1-GE3 - Leistungs-MOSFET, n-Kanal, 30 V, 5.8 A, 0.03 ohm, SOT-23, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 5.8A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1.2V
euEccn: NLR
Verlustleistung: 2.1W
Bauform - Transistor: SOT-23
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.03ohm
SVHC: No SVHC (07-Nov-2024)
Description: VISHAY - SI2366DS-T1-GE3 - Leistungs-MOSFET, n-Kanal, 30 V, 5.8 A, 0.03 ohm, SOT-23, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 5.8A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1.2V
euEccn: NLR
Verlustleistung: 2.1W
Bauform - Transistor: SOT-23
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.03ohm
SVHC: No SVHC (07-Nov-2024)
auf Bestellung 14584 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 187+ | 1.34 EUR |
| 283+ | 0.82 EUR |
| 412+ | 0.52 EUR |
| 500+ | 0.44 EUR |
| 1500+ | 0.37 EUR |