SI2366DS-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 5.8A SOT23-3
Input Capacitance (Ciss) (Max) @ Vds: 335 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.25W (Ta), 2.1W (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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Technische Details SI2366DS-T1-GE3 Vishay Siliconix
Description: MOSFET N-CH 30V 5.8A SOT23-3, Input Capacitance (Ciss) (Max) @ Vds: 335 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Supplier Device Package: SOT-23-3 (TO-236), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 1.25W (Ta), 2.1W (Tc), Rds On (Max) @ Id, Vgs: 36mOhm @ 4.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Weitere Produktangebote SI2366DS-T1-GE3 nach Preis ab 0.21 EUR bis 1.09 EUR
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SI2366DS-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; Idm: 20A; 1.3W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 5.8A Pulsed drain current: 20A Power dissipation: 1.3W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 36mΩ Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 3218 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2366DS-T1-GE3 | Vishay / Siliconix |
MOSFETs 30V Vds 20V Vgs SOT-23 |
auf Bestellung 1590 Stücke: Lieferzeit 10-14 Tag (e) |
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SI2366DS-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 30V 5.8A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc) Rds On (Max) @ Id, Vgs: 36mOhm @ 4.5A, 10V Power Dissipation (Max): 1.25W (Ta), 2.1W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 335 pF @ 15 V |
auf Bestellung 6837 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI2366DS-T1-GE3 |
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Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; Idm: 20A; 1.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.8A
Pulsed drain current: 20A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.8A; Idm: 20A; 1.3W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.8A
Pulsed drain current: 20A
Power dissipation: 1.3W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3218 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 91+ | 0.94 EUR |
| 128+ | 0.67 EUR |
| 185+ | 0.46 EUR |
| 217+ | 0.39 EUR |
| 500+ | 0.29 EUR |
| 1000+ | 0.25 EUR |
| 3000+ | 0.21 EUR |
| SI2366DS-T1-GE3 |
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Hersteller: Vishay / Siliconix
MOSFETs 30V Vds 20V Vgs SOT-23
MOSFETs 30V Vds 20V Vgs SOT-23
auf Bestellung 1590 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 1.05 EUR |
| 10+ | 0.73 EUR |
| 100+ | 0.5 EUR |
| 500+ | 0.39 EUR |
| 1000+ | 0.35 EUR |
| 3000+ | 0.3 EUR |
| 6000+ | 0.27 EUR |
| SI2366DS-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 30V 5.8A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.25W (Ta), 2.1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 335 pF @ 15 V
Description: MOSFET N-CH 30V 5.8A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.25W (Ta), 2.1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 335 pF @ 15 V
auf Bestellung 6837 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 20+ | 1.09 EUR |
| 28+ | 0.75 EUR |
| 100+ | 0.51 EUR |
| 500+ | 0.43 EUR |
| 1000+ | 0.38 EUR |