auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.18 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SI2367DS-T1-GE3 Vishay
Description: MOSFET P-CH 20V 3.8A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc), Rds On (Max) @ Id, Vgs: 66mOhm @ 2.5A, 4.5V, Power Dissipation (Max): 960mW (Ta), 1.7W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 561 pF @ 10 V.
Weitere Produktangebote SI2367DS-T1-GE3 nach Preis ab 0.19 EUR bis 0.94 EUR
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SI2367DS-T1-GE3 | Hersteller : Vishay |
 Trans MOSFET P-CH 20V 2.8A 3-Pin SOT-23 T/R |
auf Bestellung 2580 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2367DS-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 20V 2.8A 3-Pin SOT-23 T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2367DS-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 20V 3.8A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc) Rds On (Max) @ Id, Vgs: 66mOhm @ 2.5A, 4.5V Power Dissipation (Max): 960mW (Ta), 1.7W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 561 pF @ 10 V |
auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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SI2367DS-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 20V 3.8A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc) Rds On (Max) @ Id, Vgs: 66mOhm @ 2.5A, 4.5V Power Dissipation (Max): 960mW (Ta), 1.7W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 561 pF @ 10 V |
auf Bestellung 16045 Stücke: Lieferzeit 10-14 Tag (e) |
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SI2367DS-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFET -20V Vds 8V Vgs SOT-23 |
auf Bestellung 18146 Stücke: Lieferzeit 14-28 Tag (e) |
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SI2367DS-T1-GE3 | Hersteller : VISHAY |
Description: VISHAY - SI2367DS-T1-GE3 - Leistungs-MOSFET, p-Kanal, 20 V, 3.8 A, 0.066 ohm, TO-236, Oberflächenmontage tariffCode: 85412900 Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 3.8A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 400mV euEccn: NLR Verlustleistung: 960mW Anzahl der Pins: 3Pin(s) productTraceability: No Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.066ohm |
auf Bestellung 16088 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2367DS-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 20V 2.8A 3-Pin SOT-23 T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2367DS-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 20V 2.8A 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
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SI2367DS-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3A; 1.1W; SOT23 Mounting: SMD Power dissipation: 1.1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 9nC Kind of channel: enhanced Gate-source voltage: ±8V Case: SOT23 Drain-source voltage: -20V Drain current: -3A On-state resistance: 66mΩ Type of transistor: P-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SI2367DS-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3A; 1.1W; SOT23 Mounting: SMD Power dissipation: 1.1W Polarisation: unipolar Kind of package: reel; tape Gate charge: 9nC Kind of channel: enhanced Gate-source voltage: ±8V Case: SOT23 Drain-source voltage: -20V Drain current: -3A On-state resistance: 66mΩ Type of transistor: P-MOSFET |
Produkt ist nicht verfügbar |