SI2367DS-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 3.8A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Rds On (Max) @ Id, Vgs: 66mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 960mW (Ta), 1.7W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 561 pF @ 10 V
| Anzahl | Preis |
|---|---|
| 3000+ | 0.24 EUR |
| 6000+ | 0.22 EUR |
| 9000+ | 0.21 EUR |
| 15000+ | 0.2 EUR |
| 21000+ | 0.19 EUR |
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Technische Details SI2367DS-T1-GE3 Vishay Siliconix
Description: MOSFET P-CH 20V 3.8A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc), Rds On (Max) @ Id, Vgs: 66mOhm @ 2.5A, 4.5V, Power Dissipation (Max): 960mW (Ta), 1.7W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 561 pF @ 10 V.
Weitere Produktangebote SI2367DS-T1-GE3 nach Preis ab 0.2 EUR bis 1.06 EUR
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SI2367DS-T1-GE3 | Vishay Semiconductors |
MOSFETs -20V Vds 8V Vgs SOT-23 |
auf Bestellung 17716 Stücke: Lieferzeit 10-14 Tag (e) |
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SI2367DS-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 20V 3.8A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc) Rds On (Max) @ Id, Vgs: 66mOhm @ 2.5A, 4.5V Power Dissipation (Max): 960mW (Ta), 1.7W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 561 pF @ 10 V |
auf Bestellung 56721 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI2367DS-T1-GE3 |
|
Hersteller: Vishay Semiconductors
MOSFETs -20V Vds 8V Vgs SOT-23
MOSFETs -20V Vds 8V Vgs SOT-23
auf Bestellung 17716 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 6+ | 0.54 EUR |
| 10+ | 0.47 EUR |
| 100+ | 0.37 EUR |
| 500+ | 0.3 EUR |
| 1000+ | 0.24 EUR |
| 3000+ | 0.21 EUR |
| 9000+ | 0.2 EUR |
| SI2367DS-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 3.8A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Rds On (Max) @ Id, Vgs: 66mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 960mW (Ta), 1.7W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 561 pF @ 10 V
Description: MOSFET P-CH 20V 3.8A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Tc)
Rds On (Max) @ Id, Vgs: 66mOhm @ 2.5A, 4.5V
Power Dissipation (Max): 960mW (Ta), 1.7W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 561 pF @ 10 V
auf Bestellung 56721 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 17+ | 1.06 EUR |
| 27+ | 0.65 EUR |
| 100+ | 0.42 EUR |
| 500+ | 0.32 EUR |
| 1000+ | 0.29 EUR |