SI2369DS-T1-GE3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 7.6A TO236
Input Capacitance (Ciss) (Max) @ Vds: 1295 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.23 EUR |
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Technische Details SI2369DS-T1-GE3 Vishay Siliconix
Description: MOSFET P-CH 30V 7.6A TO236, Input Capacitance (Ciss) (Max) @ Vds: 1295 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: SOT-23-3 (TO-236), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc), Rds On (Max) @ Id, Vgs: 29mOhm @ 5.4A, 10V, Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Weitere Produktangebote SI2369DS-T1-GE3 nach Preis ab 0.23 EUR bis 17.88 EUR
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SI2369DS-T1-GE3 | Vishay Semiconductors |
MOSFETs -30V Vds 20V Vgs SOT-23 |
auf Bestellung 69971 Stücke: Lieferzeit 10-14 Tag (e) |
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SI2369DS-T1-GE3 | Vishay Siliconix |
Description: MOSFET P-CH 30V 7.6A TO236 Input Capacitance (Ciss) (Max) @ Vds: 1295 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: SOT-23-3 (TO-236) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 5.4A, 10V Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
auf Bestellung 3699 Stücke: Lieferzeit 10-14 Tag (e) |
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SI2369DS-T1-GE3 | VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -7.6A; Idm: -80A; 1.6W; SOT23 Case: SOT23 Mounting: SMD Kind of package: reel; tape Pulsed drain current: -80A Drain-source voltage: -30V Drain current: -7.6A Gate charge: 36nC On-state resistance: 29mΩ Power dissipation: 1.6W Gate-source voltage: ±20V Polarisation: unipolar Kind of channel: enhancement Type of transistor: P-MOSFET |
auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
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| SI2369DS-T1-GE3 |
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Hersteller: Vishay Semiconductors
MOSFETs -30V Vds 20V Vgs SOT-23
MOSFETs -30V Vds 20V Vgs SOT-23
auf Bestellung 69971 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 0.65 EUR |
| 10+ | 0.55 EUR |
| 100+ | 0.39 EUR |
| 500+ | 0.3 EUR |
| 1000+ | 0.25 EUR |
| 3000+ | 0.23 EUR |
| SI2369DS-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 7.6A TO236
Input Capacitance (Ciss) (Max) @ Vds: 1295 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 30V 7.6A TO236
Input Capacitance (Ciss) (Max) @ Vds: 1295 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Rds On (Max) @ Id, Vgs: 29mOhm @ 5.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.6A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 3699 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 18+ | 1 EUR |
| 29+ | 0.62 EUR |
| 100+ | 0.4 EUR |
| 500+ | 0.3 EUR |
| 1000+ | 0.27 EUR |
| SI2369DS-T1-GE3 |
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Hersteller: VISHAY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7.6A; Idm: -80A; 1.6W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: -80A
Drain-source voltage: -30V
Drain current: -7.6A
Gate charge: 36nC
On-state resistance: 29mΩ
Power dissipation: 1.6W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: P-MOSFET
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7.6A; Idm: -80A; 1.6W; SOT23
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: -80A
Drain-source voltage: -30V
Drain current: -7.6A
Gate charge: 36nC
On-state resistance: 29mΩ
Power dissipation: 1.6W
Gate-source voltage: ±20V
Polarisation: unipolar
Kind of channel: enhancement
Type of transistor: P-MOSFET
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 17.88 EUR |