SI2374DS-T1-BE3 Vishay Siliconix

Description: N-CHANNEL 20-V (D-S) MOSFET, Rds On (Max) @ Id, Vgs: 30mOhm @ 4A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), 5.9A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 735 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Part Status: Active, Supplier Device Package: SOT-23-3 (TO-236), Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 960mW (Ta), 1.7W (Tc).