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SI2377EDS-T1-BE3

SI2377EDS-T1-BE3 Vishay Siliconix

si2377eds.pdf Hersteller: Vishay Siliconix
Description: P-CHANNEL 20-V (D-S) MOSFET
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 4.4A (Tc)
Rds On (Max) @ Id, Vgs: 61mOhm @ 3.2A, 4.5V
Power Dissipation (Max): 1.25W (Ta), 1.8W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 8 V
auf Bestellung 1985 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
22+0.81 EUR
29+0.63 EUR
100+0.38 EUR
500+0.35 EUR
1000+0.24 EUR
Mindestbestellmenge: 22
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Technische Details SI2377EDS-T1-BE3 Vishay Siliconix

Description: P-CHANNEL 20-V (D-S) MOSFET, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 4.4A (Tc), Rds On (Max) @ Id, Vgs: 61mOhm @ 3.2A, 4.5V, Power Dissipation (Max): 1.25W (Ta), 1.8W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 8 V.

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SI2377EDS-T1-BE3 SI2377EDS-T1-BE3 Hersteller : Vishay / Siliconix si2377eds.pdf MOSFETs SOT23 P CHAN 20V
auf Bestellung 20585 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+0.85 EUR
10+0.57 EUR
100+0.39 EUR
500+0.30 EUR
1000+0.28 EUR
3000+0.21 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
SI2377EDS-T1-BE3 SI2377EDS-T1-BE3 Hersteller : Vishay Siliconix si2377eds.pdf Description: P-CHANNEL 20-V (D-S) MOSFET
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 4.4A (Tc)
Rds On (Max) @ Id, Vgs: 61mOhm @ 3.2A, 4.5V
Power Dissipation (Max): 1.25W (Ta), 1.8W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 8 V
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Im Einkaufswagen  Stück im Wert von  UAH