SI2377EDS-T1-BE3 Vishay Siliconix

Description: P-CHANNEL 20-V (D-S) MOSFET, Part Status: Active, Supplier Device Package: SOT-23-3 (TO-236), Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 1.25W (Ta), 1.8W (Tc), Rds On (Max) @ Id, Vgs: 61mOhm @ 3.2A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 4.4A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 8 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Packaging: Tape & Reel (TR).