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Technische Details SI2392ADS-T1-GE3 Vishay
Description: MOSFET N-CH 100V 3.1A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc), Rds On (Max) @ Id, Vgs: 126mOhm @ 2A, 10V, Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 196 pF @ 50 V.
Weitere Produktangebote SI2392ADS-T1-GE3 nach Preis ab 0.23 EUR bis 1.3 EUR
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SI2392ADS-T1-GE3 | Vishay |
 Trans MOSFET N-CH 100V 3.1A 3-Pin SOT-23 T/R |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2392ADS-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 100V 3.1A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc) Rds On (Max) @ Id, Vgs: 126mOhm @ 2A, 10V Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 196 pF @ 50 V |
auf Bestellung 27000 Stücke: Lieferzeit 10-14 Tag (e) |
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SI2392ADS-T1-GE3 | Vishay |
Trans MOSFET N-CH 100V 3.1A 3-Pin SOT-23 T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2392ADS-T1-GE3 | Vishay |
Trans MOSFET N-CH 100V 3.1A 3-Pin SOT-23 T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2392ADS-T1-GE3 | Vishay |
Trans MOSFET N-CH 100V 3.1A 3-Pin SOT-23 T/R |
auf Bestellung 675 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2392ADS-T1-GE3 | VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 3.1A; Idm: 8A; 1.6W; SOT23 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 3.1A Pulsed drain current: 8A Power dissipation: 1.6W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 126mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 10.4nC |
auf Bestellung 3035 Stücke: Lieferzeit 14-21 Tag (e) |
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SI2392ADS-T1-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 100V 3.1A SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc) Rds On (Max) @ Id, Vgs: 126mOhm @ 2A, 10V Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: SOT-23-3 (TO-236) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 196 pF @ 50 V |
auf Bestellung 27945 Stücke: Lieferzeit 10-14 Tag (e) |
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SI2392ADS-T1-GE3 | Vishay Semiconductors |
MOSFETs 100V Vds 20V Vgs SOT-23 |
auf Bestellung 16198 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI2392ADS-T1-GE3 |
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Hersteller: Vishay
Trans MOSFET N-CH 100V 3.1A 3-Pin SOT-23 T/R
Trans MOSFET N-CH 100V 3.1A 3-Pin SOT-23 T/R
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.27 EUR |
| 6000+ | 0.24 EUR |
| SI2392ADS-T1-GE3 |
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Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 3.1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Rds On (Max) @ Id, Vgs: 126mOhm @ 2A, 10V
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 196 pF @ 50 V
Description: MOSFET N-CH 100V 3.1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Rds On (Max) @ Id, Vgs: 126mOhm @ 2A, 10V
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 196 pF @ 50 V
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.3 EUR |
| 6000+ | 0.28 EUR |
| 9000+ | 0.27 EUR |
| 15000+ | 0.25 EUR |
| 21000+ | 0.24 EUR |
| SI2392ADS-T1-GE3 |
|
Hersteller: Vishay
Trans MOSFET N-CH 100V 3.1A 3-Pin SOT-23 T/R
Trans MOSFET N-CH 100V 3.1A 3-Pin SOT-23 T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.35 EUR |
| SI2392ADS-T1-GE3 |
|
Hersteller: Vishay
Trans MOSFET N-CH 100V 3.1A 3-Pin SOT-23 T/R
Trans MOSFET N-CH 100V 3.1A 3-Pin SOT-23 T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.35 EUR |
| SI2392ADS-T1-GE3 |
|
Hersteller: Vishay
Trans MOSFET N-CH 100V 3.1A 3-Pin SOT-23 T/R
Trans MOSFET N-CH 100V 3.1A 3-Pin SOT-23 T/R
auf Bestellung 675 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 320+ | 0.45 EUR |
| 500+ | 0.33 EUR |
| SI2392ADS-T1-GE3 |
|
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.1A; Idm: 8A; 1.6W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.1A
Pulsed drain current: 8A
Power dissipation: 1.6W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 126mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 10.4nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.1A; Idm: 8A; 1.6W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.1A
Pulsed drain current: 8A
Power dissipation: 1.6W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 126mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 10.4nC
auf Bestellung 3035 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 87+ | 0.83 EUR |
| 130+ | 0.55 EUR |
| 221+ | 0.32 EUR |
| 500+ | 0.24 EUR |
| 1000+ | 0.23 EUR |
| SI2392ADS-T1-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 3.1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Rds On (Max) @ Id, Vgs: 126mOhm @ 2A, 10V
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 196 pF @ 50 V
Description: MOSFET N-CH 100V 3.1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.1A (Tc)
Rds On (Max) @ Id, Vgs: 126mOhm @ 2A, 10V
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 196 pF @ 50 V
auf Bestellung 27945 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 14+ | 1.28 EUR |
| 23+ | 0.79 EUR |
| 100+ | 0.51 EUR |
| 500+ | 0.39 EUR |
| 1000+ | 0.35 EUR |
| SI2392ADS-T1-GE3 |
|
Hersteller: Vishay Semiconductors
MOSFETs 100V Vds 20V Vgs SOT-23
MOSFETs 100V Vds 20V Vgs SOT-23
auf Bestellung 16198 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 1.3 EUR |
| 10+ | 0.8 EUR |
| 100+ | 0.52 EUR |
| 500+ | 0.4 EUR |
| 1000+ | 0.36 EUR |
| 3000+ | 0.29 EUR |
| 6000+ | 0.28 EUR |