Produkte > VISHAY SILICONIX > SI2393DS-T1-GE3
SI2393DS-T1-GE3

SI2393DS-T1-GE3 Vishay Siliconix

si2393ds.pdf
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 6.1A/7.5A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 22.7mOhm @ 5A, 10V
Power Dissipation (Max): 1.3W (Ta), 2.5W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +16V, -20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 15 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.3 EUR
6000+0.26 EUR
9000+0.25 EUR
15000+0.24 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details SI2393DS-T1-GE3 Vishay Siliconix

Description: MOSFET P-CH 30V 6.1A/7.5A SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 7.5A (Tc), Rds On (Max) @ Id, Vgs: 22.7mOhm @ 5A, 10V, Power Dissipation (Max): 1.3W (Ta), 2.5W (Tc), Vgs(th) (Max) @ Id: 2.2V @ 250µA, Supplier Device Package: SOT-23-3 (TO-236), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): +16V, -20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 25.2 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 15 V.

Weitere Produktangebote SI2393DS-T1-GE3 nach Preis ab 0.27 EUR bis 1.29 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
SI2393DS-T1-GE3 SI2393DS-T1-GE3 Vishay Siliconix si2393ds.pdf Description: MOSFET P-CH 30V 6.1A/7.5A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 22.7mOhm @ 5A, 10V
Power Dissipation (Max): 1.3W (Ta), 2.5W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +16V, -20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 15 V
auf Bestellung 15118 Stücke:
Lieferzeit 10-14 Tag (e)
17+1.26 EUR
27+0.79 EUR
100+0.5 EUR
500+0.38 EUR
1000+0.35 EUR
Mindestbestellmenge: 17 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI2393DS-T1-GE3 SI2393DS-T1-GE3 Vishay Semiconductors si2393ds.pdf MOSFETs 30-V (D-S) MOSFET P-CHANNEL
auf Bestellung 193443 Stücke:
Lieferzeit 10-14 Tag (e)
3+1.29 EUR
10+0.8 EUR
100+0.51 EUR
500+0.39 EUR
1000+0.35 EUR
3000+0.3 EUR
6000+0.27 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI2393DS-T1-GE3 SI2393DS-T1-GE3 VISHAY si2393ds.pdf Description: VISHAY - SI2393DS-T1-GE3 - MOSFET, P-CH, 30V, 7.5A, SOT-23
tariffCode: 0
Transistormontage: Surface Mount
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 7.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.2V
euEccn: NLR
Verlustleistung: 2.5W
Bauform - Transistor: SOT-23
Anzahl der Pins: 3Pin(s)
Produktpalette: TrenchFET Gen IV Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: P Channel
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.0227ohm
directShipCharge: 25
SVHC: To Be Advised
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
SI2393DS-T1-GE3 si2393ds.pdf
SI2393DS-T1-GE3
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 30V 6.1A/7.5A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6.1A (Ta), 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 22.7mOhm @ 5A, 10V
Power Dissipation (Max): 1.3W (Ta), 2.5W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): +16V, -20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 25.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 15 V
auf Bestellung 15118 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
17+1.26 EUR
27+0.79 EUR
100+0.5 EUR
500+0.38 EUR
1000+0.35 EUR
Mindestbestellmenge: 17 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI2393DS-T1-GE3 si2393ds.pdf
SI2393DS-T1-GE3
Hersteller: Vishay Semiconductors
MOSFETs 30-V (D-S) MOSFET P-CHANNEL
auf Bestellung 193443 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+1.29 EUR
10+0.8 EUR
100+0.51 EUR
500+0.39 EUR
1000+0.35 EUR
3000+0.3 EUR
6000+0.27 EUR
Mindestbestellmenge: 3 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
SI2393DS-T1-GE3 si2393ds.pdf
SI2393DS-T1-GE3
Hersteller: VISHAY
Description: VISHAY - SI2393DS-T1-GE3 - MOSFET, P-CH, 30V, 7.5A, SOT-23
tariffCode: 0
Transistormontage: Surface Mount
Drain-Source-Spannung Vds: 30V
rohsCompliant: YES
Dauer-Drainstrom Id: 7.5A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 2.2V
euEccn: NLR
Verlustleistung: 2.5W
Bauform - Transistor: SOT-23
Anzahl der Pins: 3Pin(s)
Produktpalette: TrenchFET Gen IV Series
productTraceability: Yes-Date/Lot Code
Kanaltyp: P Channel
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 150°C
Drain-Source-Durchgangswiderstand: 0.0227ohm
directShipCharge: 25
SVHC: To Be Advised
auf Bestellung 6000 Stücke:
Lieferzeit 14-21 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH