| Anzahl | Preis |
|---|---|
| 3+ | 1.24 EUR |
| 10+ | 0.77 EUR |
| 100+ | 0.49 EUR |
| 500+ | 0.38 EUR |
| 1000+ | 0.31 EUR |
| 3000+ | 0.27 EUR |
| 6000+ | 0.25 EUR |
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Technische Details SI2399DS-T1-BE3 Vishay / Siliconix
Description: P-CHANNEL 20-V (D-S) MOSFET, Input Capacitance (Ciss) (Max) @ Vds: 835 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Supplier Device Package: SOT-23-3 (TO-236), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc), Rds On (Max) @ Id, Vgs: 34mOhm @ 5.1A, 10V, Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta), 6A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Weitere Produktangebote SI2399DS-T1-BE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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SI2399DS-T1-BE3 | Vishay Siliconix |
 Description: P-CHANNEL 20-V (D-S) MOSFETInput Capacitance (Ciss) (Max) @ Vds: 835 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Supplier Device Package: SOT-23-3 (TO-236) Vgs(th) (Max) @ Id: 1.5V @ 250µA Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 5.1A, 10V Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta), 6A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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SI2399DS-T1-BE3 | Vishay Siliconix |
Description: P-CHANNEL 20-V (D-S) MOSFET Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 835 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Supplier Device Package: SOT-23-3 (TO-236) Vgs(th) (Max) @ Id: 1.5V @ 250µA Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 5.1A, 10V Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta), 6A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| SI2399DS-T1-BE3 |
|
Hersteller: Vishay Siliconix
Description: P-CHANNEL 20-V (D-S) MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 835 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 5.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta), 6A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: P-CHANNEL 20-V (D-S) MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 835 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 5.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta), 6A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| SI2399DS-T1-BE3 |
|
Hersteller: Vishay Siliconix
Description: P-CHANNEL 20-V (D-S) MOSFET
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 835 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 5.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta), 6A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Description: P-CHANNEL 20-V (D-S) MOSFET
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 835 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 1.25W (Ta), 2.5W (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 5.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta), 6A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH