SI3099-TP

SI3099-TP Micro Commercial Co


SI3099(SOT-23).pdf Hersteller: Micro Commercial Co
Description: N-CHANNEL MOSFET,SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A
Rds On (Max) @ Id, Vgs: 408mOhm @ 500nA, 10V
Power Dissipation (Max): 830mW
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 61 pF @ 15 V
auf Bestellung 9000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.066 EUR
6000+ 0.061 EUR
9000+ 0.051 EUR
Mindestbestellmenge: 3000
Produktrezensionen
Produktbewertung abgeben

Technische Details SI3099-TP Micro Commercial Co

Description: N-CHANNEL MOSFET,SOT-23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.1A, Rds On (Max) @ Id, Vgs: 408mOhm @ 500nA, 10V, Power Dissipation (Max): 830mW, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: SOT-23, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 1.72 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 61 pF @ 15 V.

Weitere Produktangebote SI3099-TP nach Preis ab 0.076 EUR bis 0.39 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
SI3099-TP SI3099-TP Hersteller : Micro Commercial Co SI3099(SOT-23).pdf Description: N-CHANNEL MOSFET,SOT-23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A
Rds On (Max) @ Id, Vgs: 408mOhm @ 500nA, 10V
Power Dissipation (Max): 830mW
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 61 pF @ 15 V
auf Bestellung 10899 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
46+0.39 EUR
65+ 0.27 EUR
134+ 0.13 EUR
500+ 0.11 EUR
1000+ 0.076 EUR
Mindestbestellmenge: 46