
SI3099-TP MCC (Micro Commercial Components)

Description: N-CHANNEL MOSFET,SOT-23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.1A
Rds On (Max) @ Id, Vgs: 408mOhm @ 500nA, 10V
Power Dissipation (Max): 830mW
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 1.72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 61 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
3000+ | 0.07 EUR |
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Technische Details SI3099-TP MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET,SOT-23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.1A, Rds On (Max) @ Id, Vgs: 408mOhm @ 500nA, 10V, Power Dissipation (Max): 830mW, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: SOT-23, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 1.72 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 61 pF @ 15 V.
Weitere Produktangebote SI3099-TP nach Preis ab 0.09 EUR bis 0.35 EUR
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SI3099-TP | Hersteller : MCC (Micro Commercial Components) |
![]() Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.1A Rds On (Max) @ Id, Vgs: 408mOhm @ 500nA, 10V Power Dissipation (Max): 830mW Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 1.72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 61 pF @ 15 V |
auf Bestellung 4707 Stücke: Lieferzeit 10-14 Tag (e) |
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