SI3099-TP MCC (Micro Commercial Components)
Hersteller: MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET,SOT-23
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 61 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 1.72 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 830mW
Rds On (Max) @ Id, Vgs: 408mOhm @ 500nA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.1A
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Technische Details SI3099-TP MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET,SOT-23, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 61 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 1.72 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Part Status: Active, Supplier Device Package: SOT-23, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Power Dissipation (Max): 830mW, Rds On (Max) @ Id, Vgs: 408mOhm @ 500nA, 10V, Current - Continuous Drain (Id) @ 25°C: 1.1A.
Weitere Produktangebote SI3099-TP nach Preis ab 0.077 EUR bis 0.32 EUR
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SI3099-TP | MCC (Micro Commercial Components) |
Description: N-CHANNEL MOSFET,SOT-23 Current - Continuous Drain (Id) @ 25°C: 1.1A FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 61 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 1.72 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Part Status: Active Supplier Device Package: SOT-23 Vgs(th) (Max) @ Id: 1.5V @ 250µA Power Dissipation (Max): 830mW Rds On (Max) @ Id, Vgs: 408mOhm @ 500nA, 10V |
auf Bestellung 3442 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI3099-TP |
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Hersteller: MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET,SOT-23
Current - Continuous Drain (Id) @ 25°C: 1.1A
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 61 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 1.72 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 830mW
Rds On (Max) @ Id, Vgs: 408mOhm @ 500nA, 10V
Description: N-CHANNEL MOSFET,SOT-23
Current - Continuous Drain (Id) @ 25°C: 1.1A
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 61 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 1.72 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 830mW
Rds On (Max) @ Id, Vgs: 408mOhm @ 500nA, 10V
auf Bestellung 3442 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 56+ | 0.32 EUR |
| 91+ | 0.19 EUR |
| 147+ | 0.12 EUR |
| 500+ | 0.088 EUR |
| 1000+ | 0.077 EUR |