SI3127DV-T1-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET P-CH 60V 3.5A/13A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 13A (Tc)
Rds On (Max) @ Id, Vgs: 89mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 2W (Ta), 4.2W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 833 pF @ 20 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.26 EUR |
| 6000+ | 0.24 EUR |
| 9000+ | 0.23 EUR |
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Technische Details SI3127DV-T1-GE3 Vishay Siliconix
Description: MOSFET P-CH 60V 3.5A/13A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 13A (Tc), Rds On (Max) @ Id, Vgs: 89mOhm @ 1.5A, 4.5V, Power Dissipation (Max): 2W (Ta), 4.2W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 6-TSOP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 833 pF @ 20 V.
Weitere Produktangebote SI3127DV-T1-GE3 nach Preis ab 0.29 EUR bis 1.11 EUR
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SI3127DV-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 60V 3.5A/13A 6TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta), 13A (Tc) Rds On (Max) @ Id, Vgs: 89mOhm @ 1.5A, 4.5V Power Dissipation (Max): 2W (Ta), 4.2W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 6-TSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 833 pF @ 20 V |
auf Bestellung 19160 Stücke: Lieferzeit 10-14 Tag (e) |
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SI3127DV-T1-GE3 | Hersteller : Vishay / Siliconix |
MOSFET -60V Vds 20V Vgs TSOP-6 |
auf Bestellung 501832 Stücke: Lieferzeit 14-28 Tag (e) |
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SI3127DV-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 60V 5.1A 6-Pin TSOP T/R |
auf Bestellung 42000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI3127DV-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -5.1A; Idm: -20A Kind of package: reel; tape Technology: TrenchFET® Gate charge: 30nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -20A Mounting: SMD Case: TSOP6 Drain-source voltage: -60V Drain current: -5.1A On-state resistance: 89mΩ Type of transistor: P-MOSFET Power dissipation: 2.7W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SI3127DV-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -5.1A; Idm: -20A Kind of package: reel; tape Technology: TrenchFET® Gate charge: 30nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: -20A Mounting: SMD Case: TSOP6 Drain-source voltage: -60V Drain current: -5.1A On-state resistance: 89mΩ Type of transistor: P-MOSFET Power dissipation: 2.7W Polarisation: unipolar |
Produkt ist nicht verfügbar |