SI3129DV-T1-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: P-CHANNEL 80 V (D-S) MOSFET TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta), 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 82.7mOhm @ 3.8A, 10V
Power Dissipation (Max): 2W (Ta), 4.2W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 805 pF @ 40 V
auf Bestellung 2902 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 17+ | 1.07 EUR |
| 19+ | 0.93 EUR |
| 100+ | 0.64 EUR |
| 500+ | 0.54 EUR |
| 1000+ | 0.46 EUR |
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Technische Details SI3129DV-T1-GE3 Vishay Siliconix
Description: P-CHANNEL 80 V (D-S) MOSFET TSOP, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta), 5.4A (Tc), Rds On (Max) @ Id, Vgs: 82.7mOhm @ 3.8A, 10V, Power Dissipation (Max): 2W (Ta), 4.2W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 6-TSOP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 805 pF @ 40 V.
Weitere Produktangebote SI3129DV-T1-GE3 nach Preis ab 0.41 EUR bis 1.37 EUR
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SI3129DV-T1-GE3 | Hersteller : VISHAY |
Description: VISHAY - SI3129DV-T1-GE3 - Leistungs-MOSFET, p-Kanal, 80 V, 5.4 A, 0.0689 ohm, TSOP, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 80V rohsCompliant: YES Dauer-Drainstrom Id: 5.4A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 4.2W Bauform - Transistor: TSOP Anzahl der Pins: 6Pin(s) Produktpalette: TrenchFET productTraceability: No Kanaltyp: p-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.0689ohm SVHC: No SVHC (07-Nov-2024) |
auf Bestellung 5511 Stücke: Lieferzeit 14-21 Tag (e) |
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SI3129DV-T1-GE3 | Hersteller : Vishay Siliconix |
Description: P-CHANNEL 80 V (D-S) MOSFET TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta), 5.4A (Tc) Rds On (Max) @ Id, Vgs: 82.7mOhm @ 3.8A, 10V Power Dissipation (Max): 2W (Ta), 4.2W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 6-TSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 805 pF @ 40 V |
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