SI3134KDWA-TP MCC (Micro Commercial Components)
Hersteller: MCC (Micro Commercial Components)Description: MOSFET 2N-CH 20V 0.75A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 150mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 750mA
Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 16V
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SOT-363
Part Status: Active
auf Bestellung 2258 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 25+ | 0.70 EUR |
| 41+ | 0.43 EUR |
| 100+ | 0.27 EUR |
| 500+ | 0.20 EUR |
| 1000+ | 0.18 EUR |
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Technische Details SI3134KDWA-TP MCC (Micro Commercial Components)
Description: MOSFET 2N-CH 20V 0.75A SOT363, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 150mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 750mA, Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 16V, Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V, Vgs(th) (Max) @ Id: 1.1V @ 250µA, Supplier Device Package: SOT-363, Part Status: Active.
Weitere Produktangebote SI3134KDWA-TP
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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| SI3134KDWA-TP | Hersteller : Micro Commercial Components |
Dual N-Channel MOSFET |
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SI3134KDWA-TP | Hersteller : Micro Commercial Components |
Dual N-Channel MOSFET |
Produkt ist nicht verfügbar |
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SI3134KDWA-TP | Hersteller : MCC (Micro Commercial Components) |
Description: MOSFET 2N-CH 20V 0.75A SOT363 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 150mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 750mA Input Capacitance (Ciss) (Max) @ Vds: 33pF @ 16V Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 4.5V Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: SOT-363 Part Status: Active |
Produkt ist nicht verfügbar |