SI3134KW-TP MCC (Micro Commercial Components)

Description: MOSFET N-CH ENH FET 20VDS 12VGS, Input Capacitance (Ciss) (Max) @ Vds: 120 pF @ 16 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Supplier Device Package: SOT-323, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 200mW (Ta), Rds On (Max) @ Id, Vgs: 380mOhm @ 650mA, 4.5V, Current - Continuous Drain (Id) @ 25°C: 750mA, FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-70, SOT-323, Packaging: Bulk.