
SI3139KL3A-TP Micro Commercial Co

Description: P-CHANNEL MOSFET,DFN1006-3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 650mA
Rds On (Max) @ Id, Vgs: 850mOhm @ 500mA, 4.5V
Power Dissipation (Max): 900mW
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: DFN1006-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.86 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 16 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
10000+ | 0.09 EUR |
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Technische Details SI3139KL3A-TP Micro Commercial Co
Description: P-CHANNEL MOSFET,DFN1006-3, Packaging: Tape & Reel (TR), Package / Case: SC-101, SOT-883, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 650mA, Rds On (Max) @ Id, Vgs: 850mOhm @ 500mA, 4.5V, Power Dissipation (Max): 900mW, Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: DFN1006-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 0.86 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 16 V.
Weitere Produktangebote SI3139KL3A-TP nach Preis ab 0.10 EUR bis 0.65 EUR
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SI3139KL3A-TP | Hersteller : Micro Commercial Co |
![]() Packaging: Cut Tape (CT) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 650mA Rds On (Max) @ Id, Vgs: 850mOhm @ 500mA, 4.5V Power Dissipation (Max): 900mW Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: DFN1006-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.86 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 16 V |
auf Bestellung 12473 Stücke: Lieferzeit 10-14 Tag (e) |
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