SI3139KL3A-TP Micro Commercial Co
Hersteller: Micro Commercial Co
Description: P-CHANNEL MOSFET,DFN1006-3
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: DFN1006-3
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 900mW
Rds On (Max) @ Id, Vgs: 850mOhm @ 500mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 650mA
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 0.86 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
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Technische Details SI3139KL3A-TP Micro Commercial Co
Description: P-CHANNEL MOSFET,DFN1006-3, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Part Status: Active, Supplier Device Package: DFN1006-3, Vgs(th) (Max) @ Id: 1.2V @ 250µA, Power Dissipation (Max): 900mW, Rds On (Max) @ Id, Vgs: 850mOhm @ 500mA, 4.5V, Current - Continuous Drain (Id) @ 25°C: 650mA, FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-101, SOT-883, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 16 V, Gate Charge (Qg) (Max) @ Vgs: 0.86 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V.
Weitere Produktangebote SI3139KL3A-TP nach Preis ab 0.12 EUR bis 0.77 EUR
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SI3139KL3A-TP | Micro Commercial Co |
Description: P-CHANNEL MOSFET,DFN1006-3 Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 16 V Gate Charge (Qg) (Max) @ Vgs: 0.86 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: DFN1006-3 Vgs(th) (Max) @ Id: 1.2V @ 250µA Power Dissipation (Max): 900mW Rds On (Max) @ Id, Vgs: 850mOhm @ 500mA, 4.5V Current - Continuous Drain (Id) @ 25°C: 650mA FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-101, SOT-883 Packaging: Cut Tape (CT) |
auf Bestellung 12473 Stücke: Lieferzeit 10-14 Tag (e) |
|
| SI3139KL3A-TP |
|
Hersteller: Micro Commercial Co
Description: P-CHANNEL MOSFET,DFN1006-3
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 0.86 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: DFN1006-3
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 900mW
Rds On (Max) @ Id, Vgs: 850mOhm @ 500mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 650mA
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Packaging: Cut Tape (CT)
Description: P-CHANNEL MOSFET,DFN1006-3
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 0.86 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: DFN1006-3
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 900mW
Rds On (Max) @ Id, Vgs: 850mOhm @ 500mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 650mA
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-101, SOT-883
Packaging: Cut Tape (CT)
auf Bestellung 12473 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 28+ | 0.77 EUR |
| 33+ | 0.64 EUR |
| 100+ | 0.33 EUR |
| 500+ | 0.23 EUR |
| 1000+ | 0.15 EUR |
| 2000+ | 0.13 EUR |
| 5000+ | 0.12 EUR |