SI3404-TP

SI3404-TP MCC (Micro Commercial Components)


SI3404(SOT-23).pdf Hersteller: MCC (Micro Commercial Components)
Description: MOSFET N-CHANNEL 30V 5.8A SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tj)
Rds On (Max) @ Id, Vgs: 28mOhm @ 5.8A, 10V
Power Dissipation (Max): 350mW
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 15 V
auf Bestellung 6000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.11 EUR
6000+0.10 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details SI3404-TP MCC (Micro Commercial Components)

Description: MOSFET N-CHANNEL 30V 5.8A SOT23, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.8A (Tj), Rds On (Max) @ Id, Vgs: 28mOhm @ 5.8A, 10V, Power Dissipation (Max): 350mW, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SOT-23, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 15 V.

Weitere Produktangebote SI3404-TP nach Preis ab 0.09 EUR bis 0.65 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
SI3404-TP SI3404-TP Hersteller : Micro Commercial Components (MCC) SI3404_SOT_23_-3424347.pdf MOSFETs N-Channel Enhancement Mode Field Effect Transistor
auf Bestellung 5298 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+0.62 EUR
10+0.39 EUR
100+0.15 EUR
1000+0.14 EUR
3000+0.11 EUR
9000+0.09 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
SI3404-TP SI3404-TP Hersteller : MCC (Micro Commercial Components) SI3404(SOT-23).pdf Description: MOSFET N-CHANNEL 30V 5.8A SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tj)
Rds On (Max) @ Id, Vgs: 28mOhm @ 5.8A, 10V
Power Dissipation (Max): 350mW
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 15 V
auf Bestellung 11390 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.65 EUR
44+0.40 EUR
100+0.25 EUR
500+0.19 EUR
1000+0.17 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
SI3404-TP SI3404-TP Hersteller : Micro Commercial Components si3404sot-23.pdf Trans MOSFET N-CH 30V 5.8A 3-Pin SOT-23 T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI3404-TP SI3404-TP Hersteller : Micro Commercial Components si3404sot-23.pdf Trans MOSFET N-CH 30V 5.8A 3-Pin SOT-23 T/R
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI3404-TP Hersteller : MICRO COMMERCIAL COMPONENTS SI3404.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 5.8A; Idm: 30A; 1.2W
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.8A
Pulsed drain current: 30A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: SMD
Gate charge: 12.22nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SI3404-TP Hersteller : MICRO COMMERCIAL COMPONENTS SI3404.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 30V; 5.8A; Idm: 30A; 1.2W
Type of transistor: N-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.8A
Pulsed drain current: 30A
Power dissipation: 1.2W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 42mΩ
Mounting: SMD
Gate charge: 12.22nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH