| Anzahl | Preis |
|---|---|
| 4+ | 0.82 EUR |
| 10+ | 0.57 EUR |
| 100+ | 0.42 EUR |
| 500+ | 0.34 EUR |
| 1000+ | 0.32 EUR |
| 3000+ | 0.27 EUR |
| 6000+ | 0.25 EUR |
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Technische Details SI3407DV-T1-BE3 Vishay / Siliconix
Description: MOSFET P-CH 20V 7.5A/8A 6TSOP, Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Part Status: Active, Supplier Device Package: 6-TSOP, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Rds On (Max) @ Id, Vgs: 24mOhm @ 7.5A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), 8A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-23-6 Thin, TSOT-23-6, Packaging: Tape & Reel (TR), Power Dissipation (Max): 2W (Ta), 4.2W (Tc).
Weitere Produktangebote SI3407DV-T1-BE3 nach Preis ab 0.32 EUR bis 1.16 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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SI3407DV-T1-BE3 | Vishay Siliconix |
 Description: MOSFET P-CH 20V 7.5A/8A 6TSOPInput Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Active Supplier Device Package: 6-TSOP Vgs(th) (Max) @ Id: 1.5V @ 250µA Power Dissipation (Max): 2W (Ta), 4.2W (Tc) Rds On (Max) @ Id, Vgs: 24mOhm @ 7.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), 8A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Cut Tape (CT) |
auf Bestellung 3304 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI3407DV-T1-BE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 7.5A/8A 6TSOP
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 4.2W (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), 8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 20V 7.5A/8A 6TSOP
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: 6-TSOP
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 2W (Ta), 4.2W (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 7.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), 8A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
auf Bestellung 3304 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 16+ | 1.16 EUR |
| 25+ | 0.72 EUR |
| 100+ | 0.46 EUR |
| 500+ | 0.35 EUR |
| 1000+ | 0.32 EUR |