SI3417DV-T1-GE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET P-CH 30V 8A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 25.2mOhm @ 7.3A, 10V
Power Dissipation (Max): 2W (Ta), 4.2W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 15 V
auf Bestellung 12000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.32 EUR |
| 6000+ | 0.31 EUR |
| 9000+ | 0.29 EUR |
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Technische Details SI3417DV-T1-GE3 Vishay Siliconix
Description: MOSFET P-CH 30V 8A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 8A (Ta), Rds On (Max) @ Id, Vgs: 25.2mOhm @ 7.3A, 10V, Power Dissipation (Max): 2W (Ta), 4.2W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 6-TSOP, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 15 V.
Weitere Produktangebote SI3417DV-T1-GE3 nach Preis ab 0.3 EUR bis 0.97 EUR
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SI3417DV-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 30V 8A 6-Pin TSOP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI3417DV-T1-GE3 | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 30V 8A 6TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 25.2mOhm @ 7.3A, 10V Power Dissipation (Max): 2W (Ta), 4.2W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 6-TSOP Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 15 V |
auf Bestellung 16681 Stücke: Lieferzeit 21-28 Tag (e) |
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SI3417DV-T1-GE3 | Hersteller : Vishay Semiconductors |
MOSFET -30V Vds 20V Vgs TSOP-6 |
auf Bestellung 32270 Stücke: Lieferzeit 14-28 Tag (e) |
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SI3417DV-T1-GE3 | Hersteller : VISHAY |
Description: VISHAY - SI3417DV-T1-GE3 - Leistungs-MOSFET, p-Kanal, 30 V, 8 A, 0.021 ohm, TSOP, Oberflächenmontage tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES Verlustleistung: 4.2W Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR hazardous: false Drain-Source-Durchgangswiderstand: 0.021ohm rohsPhthalatesCompliant: YES usEccn: EAR99 |
auf Bestellung 1453 Stücke: Lieferzeit 14-21 Tag (e) |
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SI3417DV-T1-GE3 | Hersteller : VISHAY |
Description: VISHAY - SI3417DV-T1-GE3 - Leistungs-MOSFET, p-Kanal, 30 V, 8 A, 0.021 ohm, TSOP, Oberflächenmontage tariffCode: 85412900 productTraceability: Yes-Date/Lot Code rohsCompliant: YES Verlustleistung: 4.2W Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR hazardous: false Drain-Source-Durchgangswiderstand: 0.021ohm rohsPhthalatesCompliant: YES usEccn: EAR99 |
auf Bestellung 1453 Stücke: Lieferzeit 14-21 Tag (e) |
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SI3417DV-T1-GE3 | Hersteller : Vishay |
Trans MOSFET P-CH 30V 8A 6-Pin TSOP T/R |
Produkt ist nicht verfügbar |
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SI3417DV-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -8A; Idm: -50A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -8A Pulsed drain current: -50A Power dissipation: 2.7W Case: TSOP6 Gate-source voltage: ±20V On-state resistance: 25.2mΩ Mounting: SMD Gate charge: 50nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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SI3417DV-T1-GE3 | Hersteller : VISHAY |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; TrenchFET®; unipolar; -30V; -8A; Idm: -50A Type of transistor: P-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: -30V Drain current: -8A Pulsed drain current: -50A Power dissipation: 2.7W Case: TSOP6 Gate-source voltage: ±20V On-state resistance: 25.2mΩ Mounting: SMD Gate charge: 50nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |