auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.61 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details SI3430DV-T1-E3 Vishay
Description: MOSFET N-CH 100V 1.8A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta), Rds On (Max) @ Id, Vgs: 170mOhm @ 2.4A, 10V, Power Dissipation (Max): 1.14W (Ta), Vgs(th) (Max) @ Id: 2V @ 250µA (Min), Supplier Device Package: 6-TSOP, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 10 V.
Weitere Produktangebote SI3430DV-T1-E3 nach Preis ab 0.62 EUR bis 2.48 EUR
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SI3430DV-T1-E3 | Hersteller : Vishay |
 Trans MOSFET N-CH 100V 1.8A 6-Pin TSOP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI3430DV-T1-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 100V 1.8A 6-Pin TSOP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI3430DV-T1-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 100V 1.8A 6-Pin TSOP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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SI3430DV-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 100V 1.8A 6TSOP Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta) Rds On (Max) @ Id, Vgs: 170mOhm @ 2.4A, 10V Power Dissipation (Max): 1.14W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA (Min) Supplier Device Package: 6-TSOP Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 10 V |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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SI3430DV-T1-E3 | Hersteller : Vishay Semiconductors |
MOSFETs TSOP6 100V 2.4A N-CH MOSFET |
auf Bestellung 7097 Stücke: Lieferzeit 10-14 Tag (e) |
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SI3430DV-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 100V 1.8A 6TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta) Rds On (Max) @ Id, Vgs: 170mOhm @ 2.4A, 10V Power Dissipation (Max): 1.14W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA (Min) Supplier Device Package: 6-TSOP Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 10 V |
auf Bestellung 10104 Stücke: Lieferzeit 10-14 Tag (e) |
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SI3430DV-T1-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 100V 1.8A 6-Pin TSOP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| SI3430DV-T1-E3 | Hersteller : VISHAY |
1036+ TSOP6 |
auf Bestellung 9000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI3430DV-T1-E3 | Hersteller : Vishay |
Trans MOSFET N-CH 100V 1.8A 6-Pin TSOP T/R |
Produkt ist nicht verfügbar |
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| SI3430DV-T1-E3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 2.4A; Idm: 8A; 2W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 2.4A Pulsed drain current: 8A Power dissipation: 2W Case: TSOP6 Gate-source voltage: ±20V On-state resistance: 0.185Ω Mounting: SMD Gate charge: 8.2nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| SI3430DV-T1-E3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 2.4A; Idm: 8A; 2W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 2.4A Pulsed drain current: 8A Power dissipation: 2W Case: TSOP6 Gate-source voltage: ±20V On-state resistance: 0.185Ω Mounting: SMD Gate charge: 8.2nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |