SI3430DV-T1-E3 Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 100V 1.8A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 2.4A, 10V
Power Dissipation (Max): 1.14W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 10 V
Description: MOSFET N-CH 100V 1.8A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
Rds On (Max) @ Id, Vgs: 170mOhm @ 2.4A, 10V
Power Dissipation (Max): 1.14W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA (Min)
Supplier Device Package: 6-TSOP
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 10 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.81 EUR |
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Technische Details SI3430DV-T1-E3 Vishay Siliconix
Description: MOSFET N-CH 100V 1.8A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta), Rds On (Max) @ Id, Vgs: 170mOhm @ 2.4A, 10V, Power Dissipation (Max): 1.14W (Ta), Vgs(th) (Max) @ Id: 2V @ 250µA (Min), Supplier Device Package: 6-TSOP, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 10 V.
Weitere Produktangebote SI3430DV-T1-E3 nach Preis ab 1.07 EUR bis 2.91 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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SI3430DV-T1-E3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 100V 1.8A 6TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta) Rds On (Max) @ Id, Vgs: 170mOhm @ 2.4A, 10V Power Dissipation (Max): 1.14W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA (Min) Supplier Device Package: 6-TSOP Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 6.6 nC @ 10 V |
auf Bestellung 12585 Stücke: Lieferzeit 10-14 Tag (e) |
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SI3430DV-T1-E3 | Hersteller : Vishay Semiconductors | MOSFET 100V 170MOHMS@10V |
auf Bestellung 16687 Stücke: Lieferzeit 14-28 Tag (e) |
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SI3430DV-T1-E3 | Hersteller : VISHAY | 1036+ TSOP6 |
auf Bestellung 9000 Stücke: Lieferzeit 21-28 Tag (e) |
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SI3430DV-T1-E3 | Hersteller : Vishay | Trans MOSFET N-CH 100V 1.8A 6-Pin TSOP T/R |
Produkt ist nicht verfügbar |
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SI3430DV-T1-E3 | Hersteller : Vishay | Trans MOSFET N-CH 100V 1.8A 6-Pin TSOP T/R |
Produkt ist nicht verfügbar |
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SI3430DV-T1-E3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 2.4A; Idm: 8A; 2W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 2.4A Pulsed drain current: 8A Power dissipation: 2W Case: TSOP6 Gate-source voltage: ±20V On-state resistance: 0.185Ω Mounting: SMD Gate charge: 8.2nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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SI3430DV-T1-E3 | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 2.4A; Idm: 8A; 2W Type of transistor: N-MOSFET Technology: TrenchFET® Polarisation: unipolar Drain-source voltage: 100V Drain current: 2.4A Pulsed drain current: 8A Power dissipation: 2W Case: TSOP6 Gate-source voltage: ±20V On-state resistance: 0.185Ω Mounting: SMD Gate charge: 8.2nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |