| Anzahl | Privatkunde |
|---|---|
| 7+ | 0.49 EUR |
| 10+ | 0.42 EUR |
| 100+ | 0.37 EUR |
| 500+ | 0.33 EUR |
| 1000+ | 0.3 EUR |
| 3000+ | 0.27 EUR |
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Technische Details SI3433CDV-T1-E3 Vishay / Siliconix
Description: MOSFET P-CH 20V 6A 6TSOP, Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 8 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Supplier Device Package: 6-TSOP, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 3.3W (Tc), Rds On (Max) @ Id, Vgs: 38mOhm @ 5.2A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 6A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SOT-23-6 Thin, TSOT-23-6, Packaging: Tape & Reel (TR).
Weitere Produktangebote SI3433CDV-T1-E3 nach Preis ab 0.4 EUR bis 1.27 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
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SI3433CDV-T1-E3 | Vishay Siliconix |
 Description: MOSFET P-CH 20V 6A 6TSOPVgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 3.3W (Tc) Rds On (Max) @ Id, Vgs: 38mOhm @ 5.2A, 4.5V Current - Continuous Drain (Id) @ 25°C: 6A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 8 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: 6-TSOP |
auf Bestellung 1280 Stücke: Lieferzeit 10-14 Tag (e) |
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| SI3433CDV-T1-E3 |
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auf Bestellung 33000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SI3433CDV-T1-E3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 20V 6A 6TSOP
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 3.3W (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 5.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 8 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 6-TSOP
Description: MOSFET P-CH 20V 6A 6TSOP
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 3.3W (Tc)
Rds On (Max) @ Id, Vgs: 38mOhm @ 5.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 8 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 6-TSOP
auf Bestellung 1280 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 17+ | 1.27 EUR |
| 26+ | 0.83 EUR |
| 100+ | 0.56 EUR |
| 500+ | 0.44 EUR |
| 1000+ | 0.4 EUR |
| SI3433CDV-T1-E3 |
|
auf Bestellung 33000 Stücke:
Lieferzeit 21-28 Tag (e)